5秒后页面跳转
IMD6A PDF预览

IMD6A

更新时间: 2024-09-07 22:33:47
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管数字晶体管开关光电二极管
页数 文件大小 规格书
2页 69K
描述
General purpose (dual digital transistors)

IMD6A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.52其他特性:DIGITAL, BUILT IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G6JESD-609代码:e1
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IMD6A 数据手册

 浏览型号IMD6A的Datasheet PDF文件第2页 
EMD6 / UMD6N / IMD6A  
Transistors  
General purpose  
(dual digital transistors)  
EMD6 / UMD6N / IMD6A  
!Features  
!External dimensions (Units : mm)  
1) Both the DTA143T chip and DTC143T chip in an EMT  
or UMT or SMT package.  
2) Mounting possible with EMT3 or UMT3 or SMT3  
automatic mounting machines.  
EMD6  
( )  
3
( )  
2
( )  
1
( )  
4
( )  
5
( )  
6
1.2  
1.6  
3) Transistor elements are independent, eliminating  
interference.  
Each lead has same dimensions  
4) Mounting cost and area can be cut in half.  
ROHM : EMT6  
EMD6N  
Abbreviated symbol : D6  
!Structure  
A PNP and NPN digital transistor  
(each with a single built in resistor)  
1.25  
2.1  
The following characteristics apply to both the DTr1 and  
DTr2, however, the “ ” sign on DTr2 values for the PNP  
type have been omitted.  
0.1Min.  
Each lead has same dimensions  
ROHM : UMT6  
EIAJ : SC-88  
Abbreviated symbol : D6  
!Equivalent circuit  
IMD6A  
EMD6 / UMD6N  
IMD6A  
(4) (5) (6)  
R
(3) (2) (1)  
R
1
1
DTr1  
DTr1  
DTr2  
DTr2  
1.6  
2.8  
R1=4.7k  
R1=4.7kΩ  
R
1
R
1
(3) (2) (1)  
(4) (5) (6)  
0.3to0.6  
Each lead has same dimensions  
ROHM : SMT6  
EIAJ : SC-74  
!Absolute maximum ratings (Ta = 25°C)  
Abbreviated symbol : D6  
Limits  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Unit  
V
VCBO  
VCEO  
VEBO  
50  
50  
V
5
V
I
C
100  
mA  
Collector  
power  
dissipation  
1
2
EMD6, UMD6N  
150 (TOTAL)  
300 (TOTAL)  
150  
P
C
mW  
IMD6A  
Junction temperature  
Storage temperature  
Tj  
˚C  
˚C  
Tstg  
55∼+150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  

与IMD6A相关器件

型号 品牌 获取价格 描述 数据表
IMD6AT108 ROHM

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
IMD6AT109 ROHM

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
IMD6AT148 ROHM

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
IMD700A-Q064X128-AA INFINEON

获取价格

MOTIX™ 电机控制器 IMD700A 是英飞凌的完全可编程电机控制器,将XMC1404
IMD701A-Q064X128-AA INFINEON

获取价格

MOTIX™ 电机控制器 IMD701A 是英飞凌的完全可编程电机控制器,将XMC1404
IMD8A ROHM

获取价格

Digital Transistor Dual Digital Transistors for Inverter Drive
IMD8AT108 ROHM

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
IMD9 ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 70MA I(C) | SO
IMD9A ROHM

获取价格

Digital Transistor (Dual Digital Transistors for Inverter Drive)
IMD9AFRAT108 ROHM

获取价格

Small Signal Bipolar Transistor