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IKW30N60DTPXKSA1 PDF预览

IKW30N60DTPXKSA1

更新时间: 2023-02-15 00:00:00
品牌 Logo 应用领域
英飞凌 - INFINEON
页数 文件大小 规格书
16页 1541K
描述
Insulated Gate Bipolar Transistor, 53A I(C), 600V V(BR)CES, N-Channel, TO-247,

IKW30N60DTPXKSA1 数据手册

 浏览型号IKW30N60DTPXKSA1的Datasheet PDF文件第2页浏览型号IKW30N60DTPXKSA1的Datasheet PDF文件第3页浏览型号IKW30N60DTPXKSA1的Datasheet PDF文件第4页浏览型号IKW30N60DTPXKSA1的Datasheet PDF文件第5页浏览型号IKW30N60DTPXKSA1的Datasheet PDF文件第6页浏览型号IKW30N60DTPXKSA1的Datasheet PDF文件第7页 
IGBT  
TRENCHSTOPTMꢀPerformanceꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1  
fastꢀanti-parallelꢀdiode  
IKW30N60DTP  
600VꢀDuoPackꢀIGBTꢀandꢀdiode  
TRENCHSTOPTMꢀPerformanceꢀseries  
Dataꢀsheet  
IndustrialꢀPowerꢀControl  

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