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IDT71V256SA15PZG8 PDF预览

IDT71V256SA15PZG8

更新时间: 2024-11-16 03:04:27
品牌 Logo 应用领域
艾迪悌 - IDT 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
8页 474K
描述
Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

IDT71V256SA15PZG8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSOP
包装说明:TSOP1, TSSOP28,.53,22针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.27
Is Samacsys:N最长访问时间:15 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G28
JESD-609代码:e3长度:11.8 mm
内存密度:262144 bit内存集成电路类型:CACHE SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端口数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32KX8输出特性:3-STATE
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP28,.53,22
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.002 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.085 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.55 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:8 mmBase Number Matches:1

IDT71V256SA15PZG8 数据手册

 浏览型号IDT71V256SA15PZG8的Datasheet PDF文件第2页浏览型号IDT71V256SA15PZG8的Datasheet PDF文件第3页浏览型号IDT71V256SA15PZG8的Datasheet PDF文件第4页浏览型号IDT71V256SA15PZG8的Datasheet PDF文件第5页浏览型号IDT71V256SA15PZG8的Datasheet PDF文件第6页浏览型号IDT71V256SA15PZG8的Datasheet PDF文件第7页 
Lower Power  
IDT71V256SA  
3.3V CMOS Fast SRAM  
256K (32K x 8-Bit)  
Features  
Description  
Ideal for high-performance processor secondary cache  
Commercial (0°C to +70°C) and Industrial (–40°C to +85°C)  
temperature range options  
TheIDT71V256SAisa 262,144-bithigh-speedstaticRAMorganized  
as32Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliability  
CMOStechnology.  
Fast access times:  
TheIDT71V256SAhasoutstandinglowpowercharacteristicswhile  
at the same time maintaining very high performance. Address access  
times of as fast as 10ns are ideal for 3.3V secondary cache in 3.3V  
desktopdesigns.  
Whenpowermanagementlogicputs the IDT71V256SAinstandby  
mode,itsverylowpowercharacteristicscontributetoextendedbatterylife.  
BytakingCSHIGH,theSRAMwillautomaticallygotoalowpowerstandby  
modeandwillremaininstandbyaslongasCSremainsHIGH.Further-  
more,underfullstandbymode(CSatCMOSlevel,f=0),powerconsump-  
tionisguaranteedtoalwaysbelessthan6.6mWandtypicallywillbemuch  
smaller.  
– CommercialandIndustrial:10/12/15/20ns  
Low standby current (maximum):  
– 2mAfullstandby  
Small packages for space-efficient layouts:  
– 28-pin 300 mil SOJ  
– 28-pin TSOP Type I  
Produced with advanced high-performance CMOS  
technology  
Inputs and outputs are LVTTL-compatible  
Single 3.3V(±0.3V) power supply  
TheIDT71V256SAispackagedina28-pin300milSOJanda28-pin  
300 mil TSOP Type I.  
FunctionalBlockDiagram  
A0  
VCC  
GND  
262,144 BIT  
MEMORY ARRAY  
ADDRESS  
DECODER  
A14  
I/O  
0
I/O CONTROL  
INPUT  
DATA  
CIRCUIT  
I/O7  
,
CS  
OE  
CONTROL  
CIRCUIT  
3101 drw 01  
WE  
JANUARY 2004  
1
DSC-3101/08  
©2004IntegratedDeviceTechnology,Inc.  

IDT71V256SA15PZG8 替代型号

型号 品牌 替代类型 描述 数据表
AS7C3256A-15TC ALSC

功能相似

3.3V 32K X 8 CMOS SRAM (Common I/O)

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