Datasheet > HUF75545S3S

HUF75545S3S

更新时间： 2024-11-29 22:48:27

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
9页	100K
描述
75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET

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数据手册
替代型号

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HUF75545S3S 数据手册

HUF75545P3, HUF75545S3S

Data Sheet

June 1999

File Number 4738.1

75A, 80V, 0.010 Ohm, N-Channel, UltraFET

Power MOSFET

Packaging

Features

JEDEC TO-220AB

JEDEC TO-263AB

• Ultra Low On-Resistance

- r = 0.010Ω, V_GS= 10V

DS(ON)

• Simulation Models

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

- Temperature Compensated PSPICE and SABER

Electrical Models

- Spice and SABER Thermal Impedance Models

GATE

SOURCE

- www.semi.Intersil.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

DRAIN

(FLANGE)

HUF75545P3

HUF75545S3S

Ordering Information

Symbol

PART NUMBER

HUF75545P3

PACKAGE

TO-220AB

TO-263AB

BRAND

75545P

75545S

HUF75545S3S

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-263AB variant in tape and reel, e.g., HUF75545S3ST.

Absolute Maximum Ratings

T = 25 C, Unless Otherwise Specified

HUF75545P3, HUF75545S3S

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

±20

Drain Current

Continuous (T = 25 C, V

= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (T = 100 C, V

= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Figure 4

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS

Figures 6, 14, 15

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

270

1.8

W/ C

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T

-55 to 175

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

300

260

pkg

NOTES:

1. T = 25 C to 150 C.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

12 3 4 5 6 7...9

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HUF75545S3S 替代型号

型号	品牌	替代类型	描述	数据表
HUF75545S3ST	ONSEMI	功能相似	N 沟道，UltraFET 功率 MOSFET，80V，75A，10mΩ
HUF75545S3ST_NL	FAIRCHILD	功能相似	Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
HUF75545S3S	FAIRCHILD	功能相似	75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET

与HUF75545S3S相关器件

型号	品牌	获取价格	描述	数据表
HUF75545S3S_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
HUF75545S3ST	ROCHESTER	获取价格	75A, 80V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN
HUF75545S3ST	ONSEMI	获取价格	N 沟道，UltraFET 功率 MOSFET，80V，75A，10mΩ
HUF75545S3ST_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
HUF75545S3ST_NL	ROCHESTER	获取价格	75A, 80V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN
HUF75617D3	FAIRCHILD	获取价格	16A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs
HUF75617D3S	FAIRCHILD	获取价格	16A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs
HUF75617D3ST	FAIRCHILD	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 16A I(D) \| TO-252AA
HUF75617D3ST_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 16A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Met
HUF75623P3	FAIRCHILD	获取价格	22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs

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