Datasheet > HMC453QS16GTR

HMC453QS16GTR

更新时间： 2024-11-29 21:10:03

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
23页	1119K
描述
IC AMP CDMA 400MHZ-2.2GHZ 16QSOP

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HMC453QS16GTR 数据手册

HMC453QS16G / 453QS16GE

v01.0205

InGaP HBT 1.6 WATT POWER

AMPLIFIER, 0.4 - 2.2 GHz

Typical Applications

Features

The HMC453QS16G / HMC453QS16GE is ideal for

applications requiring a high dynamic range ampliﬁer:

Output IP3: +51 dBm

21.5 dB Gain @ 400 MHz

• GSM, GPRS & EDGE

• CDMA & W-CDMA

• CATV/Cable Modem

• Fixed Wireless & WLL

8 dB Gain @ 2100 MHz

45% PAE @ +32 dBm Pout

+25 dBm CDMA2000 Channel Power@ -45 dBc ACP

Single +5V Supply

Integrated Power Control (VPD)

QSOP16G SMT Package: 29.4 mm²

General Description

Functional Diagram

The HMC453QS16G & HMC453QS16GE are high

dynamic range GaAs InGaP Heterojunction Bipo-

lar Transistor (HBT) 1.6 watt MMIC power ampliﬁers

operating between 0.4 and 2.2 GHz. Packaged in a

miniature 16 lead QSOP plastic package, the amp-

liﬁer gain is typically 21.5 dB at 0.4 GHz and 8 dB

at 2.1 GHz. Utilizing a minimum number of external

components and a single +5V supply, the ampliﬁer

output IP3 can be optimized to +47 dBm at 0.4 GHz

or +51 dBm at 2.1 GHz. The power control (VPD)

can be used for full power down or RF output power/

current control. The high output IP3 and PAE

make the HMC453QS16G(E) ideal power ampliﬁers

for Cellular/PCS/3G, WLL, ISM and Fixed Wireless

applications.

Electrical Speciﬁcations, T_A= +25°C, Vs= +5V, VPD = +5V ^[1]

Parameter

Frequency Range

Gain

Min.

Typ.

400 - 410

21.5

Max. Min.

Typ.

450 - 496

20.5

Max. Min.

Typ.

810 - 960

Max. Min.

Typ. Max. Min. Typ. Max. Units

1710 - 1990

2010 - 2170

MHz

Gain Variation Over

Temperature

dB /

°C

0.012 0.02

Input Return Loss

Output Return Loss

Output Power for 1dB

Compression (P1dB)

32.25

32.5

28.5 31.5

33.5

dBm

Saturated Output

Power (Psat)

Output Third Order

Intercept (IP3) [2]

Noise Figure

8.5

725

7.5

725

6.5

725

Supply Current (Icq)

Control Current (IPD)

725

[1] Speciﬁcations and data reﬂect HMC453QS16G measured using the respective application circuits for each designated frequency band found

herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.

[2] Two-tone input power of -10 dBm per tone, 1 MHz spacing.

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

_{responsibility is ass}F_umo_er_{d b}p_yr_Ai_nc_ae_log, _Dd_ee_vicl_eiv_se_forr_iy_ts,_ua_sen_{, n}d_ort_foo_{r a}p_nyla_infc_rine_geo_mer_nd_tse_or_fs_pa,_tep_ntl_se_oa_{r o}s_the_ercontact Hittite Microwave Corporation:

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license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

11 - 178

Application Support: Phone: 1-800-ANALOG-D

Trademarks and registered trademarks are the property of their respective owners.

Order On-line at www.hittite.com

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与HMC453QS16GTR相关器件

型号	品牌	获取价格	描述	数据表
HMC453ST89	HITTITE	获取价格	InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz
HMC453ST89	ADI	获取价格	1.6 W功率放大器，采用SMT封装，0.4 - 2.2 GHz
HMC453ST89_10	HITTITE	获取价格	InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz
HMC453ST89E	HITTITE	获取价格	InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz
HMC453ST89ETR	ADI	获取价格	HMC453ST89ETR
HMC453ST89ETR	HITTITE	获取价格	Wide Band Medium Power Amplifier,
HMC453ST89TR	HITTITE	获取价格	HMC453ST89TR
HMC454	ADI	获取价格	? 瓦特高IP3放大器，采用SMT封装，0.4 - 2.5 GHz
HMC454ST89	HITTITE	获取价格	InGaP HBT 1/2 WATT HIGH IP3 AMPLIFIER, 0.4 - 2.5 GHz
HMC454ST89_07	HITTITE	获取价格	InGaP HBT  WATT HIGH IP3 AMPLIFIER, 0.4 - 2.

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