Datasheet > HMC457

HMC457

更新时间： 2023-12-20 18:44:29

品牌	Logo	应用领域
亚德诺 - ADI		放大器功率放大器
页数	文件大小	规格书
10页	518K
描述
1瓦特功率放大器，采用SMT封装，1.7 - 2.2 GHz

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HMC457 数据手册

HMC457QS16G / 457QS16GE

v03.0907

InGaP HBT 1 WATT POWER

AMPLIFIER, 1.7 - 2.2 GHz

Typical Applications

Features

The HMC457QS16G / HMC457QS16GE is ideal for

applications requiring a high dynamic range ampliﬁer:

Output IP3: +46 dBm

Gain: 27 dB @ 1900 MHz

48% PAE @ +32 dBm Pout

• CDMA & W-CDMA

• GSM, GPRS & Edge

• Base Stations & Repeaters

+25 dBm W-CDMA Channel Power

@ -50 dBc ACPR

Integrated Power Control (Vpd)

QSOP16G SMT Package: 29.4 mm²

Included in the HMC-DK002 Designer’s Kit

Functional Diagram

General Description

The HMC457QS16G & HMC457QS16GE are high

dynamic range GaAs InGaP Heterojunction Bipolar

Transistor (HBT) 1 watt MMIC power ampliﬁers

operating between 1.7 and 2.2 GHz. Packaged in a

miniature 16 lead QSOP plastic package, the ampliﬁer

gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB

from 2.0 to 2.2 GHz. Utilizing a minimum number of

external components, the ampliﬁer output IP3 can

be optimized to +45 dBm. The power control (Vpd)

can be used for full power down or RF output power/

current control. The high output IP3 and PAE make

the HMC457QS16G & HMC457QS16GE ideal power

ampliﬁers for Cellular/3G base station & repeater

applications.

Electrical Speciﬁcations, T_A= +25°C, Vs= +5V, Vpd = +5V, Vbias = +5V ^[1]

Parameter

Min.

Typ.

Max.

Min.

Typ.

Max.

Units

MHz

Frequency Range

1710 - 1990

2010 - 2170

Gain

0.025

Gain Variation Over Temperature

Input Return Loss

0.035

dB / °C

Output Return Loss

Output Power for 1dB Compression (P1dB)

Saturated Output Power (Psat)

27.5

30.5

dBm

32.5

[2]

Output Third Order Intercept (IP3)

Noise Figure

Supply Current (Icq)

Control Current (Ipd)

Bias Current (Vbias)

500

[1] Speciﬁcations and data reﬂect HMC457QS16G measured using the respective application circuits for each designated frequency band found

herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.

[2] Two-tone output power of +15 dBm per tone, 1 MHz spacing.

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

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license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

11 - 240

Application Support: Phone: 1-800-ANALOG-D

Trademarks and registered trademarks are the property of their respective owners.

Order On-line at www.hittite.com

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与HMC457相关器件

型号	品牌	获取价格	描述	数据表
HMC457QS16G	HITTITE	获取价格	InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz
HMC457QS16G_09	HITTITE	获取价格	InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz
HMC457QS16GE	HITTITE	获取价格	InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz
HMC457QS16GETR	HITTITE	获取价格	Narrow Band Medium Power Amplifier,
HMC457QS16GTR	HITTITE	获取价格	Narrow Band Medium Power Amplifier,
HMC459	HITTITE	获取价格	GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18.0 GHz
HMC459_07	HITTITE	获取价格	GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz
HMC459_09	HITTITE	获取价格	GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz
HMC459-Die	ADI	获取价格	宽带功率放大器芯片，DC - 18 GHz
HMC460	HITTITE	获取价格	GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz

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