HMC459
v01.1007
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18 GHz
3
Typical Applications
The HMC459 wideband driver is ideal for:
Features
P1dB Output Power: +25 dBm
Gain: 17 dB
• Telecom Infrastructure
Output IP3: +31.5 dBm
Supply Voltage: +8V @ 290 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.63 x 0.1 mm
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
Functional Diagram
General Description
The HMC459 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC
and 18 GHz. The amplifier provides 17 dB of gain,
+31.5 dBm output IP3 and +25 dBm of output power
at 1 dB gain compression while requiring 290 mA
from a +8V supply. Gain flatness is good making the
HMC459 ideal for EW, ECM and radar driver amplifier
applications. The HMC459 amplifier I/O’s are inter-
nally matched to 50 Ohms facilitating easy integration
into Multi-Chip-Modules (MCMs). All data is with the
chip in a 50 Ohm test fixture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length 0.31mm
(12 mils).
Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Frequency Range
Min.
Typ.
DC - 2.0
18.5
0.5
Max.
Min.
Typ.
DC - 6.0
18
Max.
Min.
Typ.
DC - 10.0
17
Max.
Min
Typ
DC - 18.0
12
Max
Units
GHz
dB
Gain
16.5
15
14
9
Gain Flatness
0.75
0.02
19.5
15
0.75
0.03
19
dB
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
0.02
22
0.03
0.03
0.04
0.035 0.045 dB/ °C
10
14
dB
dB
27
14
Output Power for 1 dB
Compression (P1dB)
21
24
26.5
40
20.5
24.5
26.5
34
22
25
14
17
21
dBm
dBm
dBm
dB
Saturated Output Power (Psat)
26.5
31.5
3.0
Output Third Order Intercept
(IP3)
26
Noise Figure
4.0
4.0
6.5
290
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)
290
290
290
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 40