HMC459
v00.0204
MICROWAVE CORPORATION
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18.0 GHz
Typical Applications
The HMC459 wideband driver is ideal for:
Features
+25 dBm P1dB Output Power
1
Gain: 17 dB
• Telecom Infrastructure
+31.5 dBm Output IP3
Supply Voltage: +8.0V @ 290 mA
50 Ohm Matched Input/Output
3.12 mm x 1.63 mm x 0.1 mm
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
Functional Diagram
General Description
The HMC459 is a GaAs MMIC PHEMT Distrib-
uted Power Amplifier die which operates between
DC and 18 GHz. The amplifier provides 17 dB
of gain, +31.5 dBm output IP3 and +25 dBm of
output power at 1 dB gain compression while
requiring 290 mA from a +8V supply. Gain flat-
ness is good making the HMC459 ideal for EW,
ECM and radar driver amplifier applications. The
HMC459 amplifier I/O’s are internally matched to
50 Ohms facilitating easy integration into Multi-
Chip-Modules (MCMs). All data is with the chip
in a 50 Ohm test fixture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length
0.31mm (12 mils).
Electrical Specifications,TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Min.
Typ.
DC - 2.0
18.5
0.5
Max.
Min.
Typ.
DC - 6.0
18
Max.
Min.
Typ.
DC - 10.0
17
Max.
Min
Typ
DC - 18.0
12
Max
Units
GHz
dB
Frequency Range
Gain
16.5
15
14
9
Gain Flatness
0.75
0.02
19.5
15
0.75
0.03
19
dB
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
0.02
22
0.03
0.03
0.04
0.035 0.045
dB/ °C
dB
10
14
27
14
dB
Output Power for 1 dB
Compression (P1dB)
21
24
20.5
24.5
22
25
14
17
dBm
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
26.5
40
26.5
34
26.5
31.5
3.0
21
26
dBm
dBm
dB
4.0
4.0
6.5
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)
290
290
290
290
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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