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HMC457QS16G PDF预览

HMC457QS16G

更新时间: 2024-11-28 21:55:47
品牌 Logo 应用领域
HITTITE 射频微波功率放大器
页数 文件大小 规格书
10页 356K
描述
InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz

HMC457QS16G 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred包装说明:SSOP16,.25
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.11特性阻抗:50 Ω
构造:COMPONENT增益:22 dB
最大输入功率 (CW):15 dBmJESD-609代码:e0
安装特点:SURFACE MOUNT功能数量:1
端子数量:16最大工作频率:2200 MHz
最小工作频率:1700 MHz最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:SSOP16,.25电源:5 V
射频/微波设备类型:NARROW BAND MEDIUM POWER子类别:RF/Microwave Amplifiers
表面贴装:YES技术:GAAS
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

HMC457QS16G 数据手册

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HMC457QS16G  
v00.0904  
InGaP HBT 1 WATT POWER  
AMPLIFIER, 1.7 - 2.2 GHz  
Typical Applications  
The HMC457QS16G is ideal for applications requiring  
a high dynamic range amplifier:  
Features  
8
Output IP3: +46 dBm  
Gain: 27 dB @ 1900 MHz  
48% PAE @ +32 dBm Pout  
• CDMA & W-CDMA  
• GSM, GPRS & Edge  
• Base Stations & Repeaters  
+25 dBm W-CDMA Channel Power  
@ -50 dBc ACPR  
Integrated Power Control (Vpd)  
QSOP16G SMT Package: 29.4 mm2  
Functional Diagram  
General Description  
The HMC457QS16G is a high dynamic range  
GaAs InGaP Heterojunction Bipolar Transistor  
(HBT) 1 watt MMIC power amplifier operating  
between 1.7 and 2.2 GHz. Packaged in a miniature  
16 lead QSOP plastic package, the amplifier gain  
is typically 27 dB from 1.7 to 2.0 GHz and 25 dB  
from 2.0 to 2.2 GHz. Utilizing a minimum number of  
external components, the amplifier output IP3 can  
be optimized to +45 dBm. The power control (Vpd)  
can be used for full power down or RF output power/  
current control.The high output IP3 and PAE makes  
the HMC457QS16G an ideal power amplifier for  
Cellular/3G base station & repeater applications.  
Electrical Specifications,TA = +25°C, Vs= +5V, Vpd = +5V, Vbias = +5V (note 1)  
Parameter  
Min.  
Typ.  
Max.  
Min.  
Typ.  
Max.  
Units  
MHz  
dB  
Frequency Range  
1710 - 1990  
2010 - 2170  
Gain  
24  
27  
0.025  
11  
22  
25  
0.025  
11  
Gain Variation Over Temperature  
Input Return Loss  
0.035  
0.035  
dB / °C  
dB  
Output Return Loss  
8
5
dB  
Output Power for 1dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3) (note 2)  
Noise Figure  
26  
42  
29  
27.5  
42  
30.5  
32  
dBm  
dBm  
dBm  
dB  
32.5  
45  
45  
6
5
Supply Current (Icq)  
500  
4
500  
4
mA  
Control Current (Ipd)  
Bias Current (Vbias)  
mA  
10  
10  
mA  
Note 1: Specifications and data reflect HMC457QS16G measured using the respective application circuits for each designated frequency band found  
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.  
Note 2: Two-tone output power of +15 dBm per tone, 1 MHz spacing.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 300  

HMC457QS16G 替代型号

型号 品牌 替代类型 描述 数据表
HMC457QS16GE HITTITE

完全替代

InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz

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