Datasheet > 射频和微波 > 射频/微波放大器> HMC457QS16G

HMC457QS16G

更新时间： 2024-01-29 22:46:50

品牌	Logo	应用领域
HITTITE		射频微波功率放大器
页数	文件大小	规格书
10页	356K
描述
InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

HMC457QS16G 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.63	射频/微波设备类型：	NARROW BAND MEDIUM POWER
Base Number Matches：	1

HMC457QS16G 数据手册

HMC457QS16G

v00.0904

InGaP HBT 1 WATT POWER

AMPLIFIER, 1.7 - 2.2 GHz

Typical Applications

The HMC457QS16G is ideal for applications requiring

a high dynamic range ampliﬁer:

Features

Output IP3: +46 dBm

Gain: 27 dB @ 1900 MHz

48% PAE @ +32 dBm Pout

• CDMA & W-CDMA

• GSM, GPRS & Edge

• Base Stations & Repeaters

+25 dBm W-CDMA Channel Power

@ -50 dBc ACPR

Integrated Power Control (Vpd)

QSOP16G SMT Package: 29.4 mm²

Functional Diagram

General Description

The HMC457QS16G is a high dynamic range

GaAs InGaP Heterojunction Bipolar Transistor

(HBT) 1 watt MMIC power ampliﬁer operating

between 1.7 and 2.2 GHz. Packaged in a miniature

16 lead QSOP plastic package, the ampliﬁer gain

is typically 27 dB from 1.7 to 2.0 GHz and 25 dB

from 2.0 to 2.2 GHz. Utilizing a minimum number of

external components, the ampliﬁer output IP3 can

be optimized to +45 dBm. The power control (Vpd)

can be used for full power down or RF output power/

current control.The high output IP3 and PAE makes

the HMC457QS16G an ideal power ampliﬁer for

Cellular/3G base station & repeater applications.

Electrical Speciﬁcations,T_A= +25°C, Vs= +5V, Vpd = +5V, Vbias = +5V (note 1)

Parameter

Min.

Typ.

Max.

Min.

Typ.

Max.

Units

MHz

Frequency Range

1710 - 1990

2010 - 2170

Gain

0.025

Gain Variation Over Temperature

Input Return Loss

0.035

dB / °C

Output Return Loss

Output Power for 1dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3) (note 2)

Noise Figure

27.5

30.5

dBm

32.5

Supply Current (Icq)

500

Control Current (Ipd)

Bias Current (Vbias)

Note 1: Speciﬁcations and data reﬂect HMC457QS16G measured using the respective application circuits for each designated frequency band found

herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.

Note 2: Two-tone output power of +15 dBm per tone, 1 MHz spacing.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8 - 300

12 3 4 5 6 7...10

中文翻译

下载PDF

HMC457QS16G 替代型号

型号	品牌	替代类型	描述	数据表
HMC457QS16GE	HITTITE	完全替代	InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz

与HMC457QS16G相关器件

型号	品牌	获取价格	描述	数据表
HMC457QS16G_09	HITTITE	获取价格	InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz
HMC457QS16GE	HITTITE	获取价格	InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz
HMC457QS16GETR	HITTITE	获取价格	Narrow Band Medium Power Amplifier,
HMC457QS16GTR	HITTITE	获取价格	Narrow Band Medium Power Amplifier,
HMC459	HITTITE	获取价格	GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18.0 GHz
HMC459_07	HITTITE	获取价格	GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz
HMC459_09	HITTITE	获取价格	GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz
HMC459-Die	ADI	获取价格	宽带功率放大器芯片，DC - 18 GHz
HMC460	HITTITE	获取价格	GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz
HMC460_06	HITTITE	获取价格	GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz

与HMC457QS16G相关文章

REF70数据手册解读：高精度电压参考源的全面剖析
2024-07-08

2
解析30211801数据手册：PCB端子排MKDSV 5/3-9.5
2024-07-08

2
UL248-14数据手册深度解读：微型保险丝的全面剖析
2024-07-08

4
BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

18

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC457QS16G

HMC457QS16G 技术参数

HMC457QS16G 数据手册

HMC457QS16G 替代型号

与HMC457QS16G相关器件

与HMC457QS16G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC457QS16G

HMC457QS16G 技术参数

HMC457QS16G 数据手册

HMC457QS16G 替代型号

与HMC457QS16G相关器件

与HMC457QS16G相关文章

您还可以找

您在本页遇到什么问题？