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HMC454ST89 PDF预览

HMC454ST89

更新时间: 2024-11-28 22:36:27
品牌 Logo 应用领域
HITTITE 放大器射频微波
页数 文件大小 规格书
14页 401K
描述
InGaP HBT 1/2 WATT HIGH IP3 AMPLIFIER, 0.4 - 2.5 GHz

HMC454ST89 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred包装说明:TO-243
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.09特性阻抗:50 Ω
构造:COMPONENT增益:11 dB
最大输入功率 (CW):25 dBmJESD-609代码:e0
安装特点:SURFACE MOUNT功能数量:1
端子数量:3最大工作频率:2500 MHz
最小工作频率:400 MHz最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:TO-243电源:5 V
射频/微波设备类型:WIDE BAND MEDIUM POWER子类别:RF/Microwave Amplifiers
最大压摆率:175 mA表面贴装:YES
技术:BIPOLAR端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

HMC454ST89 数据手册

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HMC454ST89  
v02.0404  
MICROWAVE CORPORATION  
InGaP HBT ½ WATT HIGH IP3  
AMPLIFIER, 0.4 - 2.5 GHz  
Typical Applications  
The HMC454ST89 is ideal for applications requiring  
a high dynamic range amplifier:  
Features  
8
Output IP3: +40 to +42 dBm  
Gain: 12.5 dB @ 2150 MHz  
50% PAE @ +28 dBm Pout  
+17.5 dBm W-CDMA Channel Power@ -45 dBc ACP  
Single +5V Supply  
• GSM, GPRS & EDGE  
• CDMA & W-CDMA  
• CATV/Cable Modem  
• Fixed Wireless & WLL  
Industry Standard SOT89 Package  
Functional Diagram  
General Description  
The HMC454ST89 is a high dynamic range  
GaAs InGaP Heterojunction Bipolar Transistor  
(HBT) ½ watt MMIC amplifier operating between  
0.4 and 2.5 GHz. Packaged in a low cost industry  
standard SOT89, the amplifier gain is typically  
17.8 dB from 0.8 to 1.0 GHz and 12.5 dB from  
1.8 to 2.2 GHz. Utilizing a minimum number of  
external components and a single +5V supply,  
the amplifier output IP3 can be optimized to +40  
dBm at 0.9 GHz or +42 dBm at 2.0 GHz.The high  
output IP3 and PAE makes the HMC454ST89 an  
ideal driver amplifier for Cellular/PCS/3G, WLL,  
ISM and Fixed Wireless applications.  
Electrical Specifications,TA = +25°C, Vs= +5V, (note 1)  
Parameter  
Min.  
Typ.  
824 - 960  
17.8  
0.008  
9
Max.  
Min.  
Typ.  
1800 - 2000  
12.5  
0.008  
7
Max.  
Min.  
11  
Typ.  
2000 - 2200  
12.5  
Max.  
Units  
MHz  
dB  
Frequency Range  
Gain  
16  
11  
Gain Variation Over Temperature  
Input Return Loss  
0.016  
0.016  
0.008  
12  
0.016  
dB / °C  
dB  
Output Return Loss  
13  
21  
19  
dB  
Output Power for 1dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3) (note 2)  
Noise Figure  
22  
37  
24.5  
25.5  
40  
24  
38  
27  
24  
38  
27.5  
dBm  
dBm  
dBm  
dB  
28.5  
41  
28.5  
42  
8
6.5  
5.2  
Supply Current (Icq)  
150  
150  
150  
mA  
Note 1: Specifications and data reflect HMC454ST89 measured using the respective application circuits for each designated frequency band found  
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.  
Note 2: Two-tone input power of 0 dBm per tone, 1 MHz spacing.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
8 - 250  

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