5秒后页面跳转
HMC454ST89ETR PDF预览

HMC454ST89ETR

更新时间: 2024-02-10 10:15:42
品牌 Logo 应用领域
HITTITE 放大器射频微波
页数 文件大小 规格书
12页 406K
描述
Wide Band Medium Power Amplifier,

HMC454ST89ETR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:TO-243
针数:3Reach Compliance Code:not_compliant
风险等级:5.08安装特点:SURFACE MOUNT
功能数量:1端子数量:3
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:TO-243
电源:5 V射频/微波设备类型:WIDE BAND MEDIUM POWER
子类别:RF/Microwave Amplifiers最大压摆率:175 mA
表面贴装:YES技术:BIPOLAR
Base Number Matches:1

HMC454ST89ETR 数据手册

 浏览型号HMC454ST89ETR的Datasheet PDF文件第2页浏览型号HMC454ST89ETR的Datasheet PDF文件第3页浏览型号HMC454ST89ETR的Datasheet PDF文件第4页浏览型号HMC454ST89ETR的Datasheet PDF文件第5页浏览型号HMC454ST89ETR的Datasheet PDF文件第6页浏览型号HMC454ST89ETR的Datasheet PDF文件第7页 
HMC454ST89 / 454ST89E  
v04.0907  
InGaP HBT ½ WATT HIGH IP3  
AMPLIFIER, 0.4 - 2.5 GHz  
9
Typical Applications  
The HMC454ST89 / HMC454ST89E is ideal for appli-  
cations requiring a high dynamic range amplifier:  
Features  
Output IP3: +40 to +42 dBm  
Gain: 12.5 dB @ 2150 MHz  
• GSM, GPRS & EDGE  
• CDMA & W-CDMA  
• CATV/Cable Modem  
• Fixed Wireless & WLL  
50% PAE @ +28 dBm Pout  
+17.5 dBm W-CDMA Channel Power@ -45 dBc ACP  
Single +5V Supply  
Industry Standard SOT89 Package  
Included in the HMC-DK002 Designer’s Kit  
Functional Diagram  
General Description  
TheHMC454ST89&HMC454ST89Earehighdynamic  
range GaAs InGaP Heterojunction Bipolar Transistor  
(HBT) ½ watt MMIC amplifiers operating between 0.4  
and 2.5 GHz. Packaged in a low cost industry standard  
SOT89, the amplifier gain is typically 17.8 dB from 0.8  
to 1.0 GHz and 12.5 dB from 1.8 to 2.2 GHz. Utilizing a  
minimum number of external components and a single  
+5V supply, the amplifier output IP3 can be optimized  
to +40 dBm at 0.9 GHz or +42 dBm at 2.0 GHz. The  
high output IP3 and PAE makes the HMC454ST89 an  
ideal driver amplifier for Cellular/PCS/3G, WLL, ISM  
and Fixed Wireless applications.  
Electrical Specifications, TA = +25°C, Vs= +5V [1]  
Parameter  
Min.  
Typ.  
824 - 960  
17.8  
0.008  
9
Max.  
Min.  
11  
Typ.  
Max.  
Min.  
11  
Typ.  
2000 - 2200  
12.5  
Max.  
Units  
MHz  
dB  
Frequency Range  
1800 - 2000  
Gain  
16  
12.5  
0.008  
7
Gain Variation Over Temperature  
Input Return Loss  
0.016  
0.016  
0.008  
12  
0.016  
dB / °C  
dB  
Output Return Loss  
13  
21  
19  
dB  
Output Power for 1dB Compression (P1dB)  
Saturated Output Power (Psat)  
22  
37  
24.5  
25.5  
40  
24  
38  
27  
24  
38  
27.5  
dBm  
dBm  
dBm  
dB  
28.5  
41  
28.5  
42  
[2]  
Output Third Order Intercept (IP3)  
Noise Figure  
8
6.5  
150  
5.2  
Supply Current (Icq)  
150  
175  
175  
150  
175  
mA  
[1] Specifications and data reflect HMC454ST89 measured using the respective application circuits for each designated frequency band found  
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.  
[2] Two-tone input power of 0 dBm per tone, 1 MHz spacing.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
9 - 220  

HMC454ST89ETR 替代型号

型号 品牌 替代类型 描述 数据表
HMC454ST89E HITTITE

完全替代

InGaP HBT ? WATT HIGH IP3 AMPLIFIER, 0.4 - 2.5 GHz

与HMC454ST89ETR相关器件

型号 品牌 获取价格 描述 数据表
HMC454ST89TR HITTITE

获取价格

Wide Band Medium Power Amplifier,
HMC455 ADI

获取价格

?瓦特高IP3放大器,采用SMT封装,1.7 - 2.5 GHz
HMC455LP3 HITTITE

获取价格

InGaP HBT 1/2 Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz
HMC455LP3_06 HITTITE

获取价格

InGaP HBT  Watt High IP3 AMPLIFIER, 1.7 - 2.
HMC455LP3_09 HITTITE

获取价格

InGaP HBT ? Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz
HMC455LP3E HITTITE

获取价格

InGaP HBT ? Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz
HMC455LP3ETR HITTITE

获取价格

Narrow Band Medium Power Amplifier,
HMC455LP3TR HITTITE

获取价格

Narrow Band Medium Power Amplifier,
HMC457 ADI

获取价格

1瓦特功率放大器,采用SMT封装,1.7 - 2.2 GHz
HMC457QS16G HITTITE

获取价格

InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz