Datasheet > HMC455LP3_06

HMC455LP3_06

更新时间： 2024-02-05 03:28:11

品牌	Logo	应用领域
HITTITE		放大器
页数	文件大小	规格书
8页	384K
描述
InGaP HBT  Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz

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HMC455LP3_06 数据手册

HMC455LP3 / 455LP3E

v02.0605

InGaP HBT ½ Watt High IP3

AMPLIFIER, 1.7 - 2.5 GHz

Typical Applications

Features

This ampliﬁer is ideal for high linearity applications:

• Multi-Carrier Systems

• GSM, GPRS & EDGE

• CDMA & WCDMA

Output IP3: +42 dBm

Gain: 13 dB

56% PAE @ +28 dBm Pout

+19 dBm W-CDMA Channel Power @ -45 dBc ACP

3x3 mm QFN SMT Package

• PHS

Functional Diagram

General Description

The HMC455LP3 & HMC455LP3E are high output

IP3 GaAs InGaP Heterojunction Bipolar Transistor

(HBT) ½ watt MMIC ampliﬁers operating between

1.7 and 2.5 GHz. Utilizing a minimum number of

external components the ampliﬁer provides 13 dB of

gain and +28 dBm of saturated power at 56% PAE

from a single +5 Vdc supply voltage. The high output

IP3 of +42 dBm coupled with the low VSWR of 1.4:1

make the HMC455LP3 & HMC455LP3E ideal driver

ampliﬁers for PCS/3G wireless infrastructures. A low

cost, leadless 3x3 mm QFN surface mount package

(LP3) houses the linear ampliﬁer. The LP3 provides

an exposed base for excellent RF and thermal

performance.

Electrical Specifications, T_A= +25° C, Vs= +5V

Parameter

Min.

Typ.

1.7 - 1.9

13.5

0.012

Max.

Min.

10.5

Typ.

1.9 - 2.2

Max.

0.02

Min.

Typ.

2.2 - 2.5

11.5

0.012

Max.

0.02

Units

GHz

Frequency Range

Gain

11.5

Gain Variation Over Temperature

Input Return Loss

0.02

0.012

dB / °C

Output Return Loss

Output Power for 1dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

24.5

27.5

dBm

28.5

Supply Current (Icq)

150

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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