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GAL20V8Z-12QP PDF预览

GAL20V8Z-12QP

更新时间: 2024-11-07 22:25:15
品牌 Logo 应用领域
莱迪思 - LATTICE /
页数 文件大小 规格书
19页 307K
描述
Zero Power E2CMOS PLD

GAL20V8Z-12QP 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP24,.3
针数:24Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.68其他特性:REGISTER PRELOAD; POWER-UP RESET
架构:PAL-TYPE最大时钟频率:55 MHz
JESD-30 代码:R-PDIP-T24JESD-609代码:e0
长度:31.855 mm专用输入次数:11
I/O 线路数量:8输入次数:20
输出次数:8产品条款数:64
端子数量:24最高工作温度:75 °C
最低工作温度:组织:11 DEDICATED INPUTS, 8 I/O
输出函数:MACROCELL封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP24,.3
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):225电源:5 V
可编程逻辑类型:EE PLD传播延迟:15 ns
认证状态:Not Qualified座面最大高度:4.57 mm
子类别:Programmable Logic Devices最大供电电压:5.25 V
最小供电电压:4.75 V标称供电电压:5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL EXTENDED端子面层:Tin/Lead (Sn85Pb15)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:7.62 mmBase Number Matches:1

GAL20V8Z-12QP 数据手册

 浏览型号GAL20V8Z-12QP的Datasheet PDF文件第2页浏览型号GAL20V8Z-12QP的Datasheet PDF文件第3页浏览型号GAL20V8Z-12QP的Datasheet PDF文件第4页浏览型号GAL20V8Z-12QP的Datasheet PDF文件第5页浏览型号GAL20V8Z-12QP的Datasheet PDF文件第6页浏览型号GAL20V8Z-12QP的Datasheet PDF文件第7页 
GAL20V8Z  
GAL20V8ZD  
Zero Power E2CMOS PLD  
Features  
Functional Block Diagram  
• ZERO POWER E2CMOS TECHNOLOGY  
— 100µA Standby Current  
I/CLK  
I
IMUX  
— Input Transition Detection on GAL20V8Z  
— Dedicated Power-down Pin on GAL20V8ZD  
— Input and Output Latching During Power Down  
• HIGH PERFORMANCE E2CMOS TECHNOLOGY  
— 12 ns Maximum Propagation Delay  
— Fmax = 83.3 MHz  
— 8 ns Maximum from Clock Input to Data Output  
— TTL Compatible 16 mA Output Drive  
— UltraMOS® Advanced CMOS Technology  
• E2 CELL TECHNOLOGY  
— Reconfigurable Logic  
— Reprogrammable Cells  
— 100% Tested/100% Yields  
— High Speed Electrical Erasure (<100ms)  
— 20 Year Data Retention  
I
CLK  
I/O/Q  
8
8
OLMC  
I
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
OLMC  
OLMC  
OLMC  
OLMC  
OLMC  
OLMC  
I/DPP  
8
8
8
I
I
• EIGHT OUTPUT LOGIC MACROCELLS  
— Maximum Flexibility for Complex Logic Designs  
— Programmable Output Polarity  
I
I
8
8
8
— Architecturally Similar to Standard GAL20V8  
• PRELOAD AND POWER-ON RESET OF ALL REGISTERS  
— 100% Functional Testability  
I
• APPLICATIONS INCLUDE:  
— Battery Powered Systems  
— DMA Control  
— State Machine Control  
— High Speed Graphics Processing  
OLMC  
IMUX  
I
I
OE  
I
I/OE  
• ELECTRONIC SIGNATURE FOR IDENTIFICATION  
Description  
Pin Configuration  
DIP  
The GAL20V8Z and GAL20V8ZD, at 100 µA standby current and  
12ns propagation delay provides the highest speed and lowest  
power combination PLD available in the market. The  
GAL20V8Z/ZD is manufactured using Lattice Semiconductor's ad-  
vanced zero power E2CMOS process, which combines CMOS with  
Electrically Erasable (E2) floating gate technology.  
I/CLK  
1
2 4  
23  
Vcc  
I
PLCC  
I
2
I
I/DPP  
I
22  
I/O/Q  
3
GAL  
20V8Z  
20V8ZD  
4
2
2 8  
26  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I
4
21  
20  
19  
18  
17  
I/DPP  
5
7
2 5 I/O/Q  
The GAL20V8Z uses Input Transition Detection (ITD) to put the  
device in standby mode and is capable of emulating the full func-  
tionality of the standard GAL20V8. The GAL20V8ZD utilizes a  
dedicated power-down pin (DPP) to put the device in standby mode.  
It has 19 inputs available to the AND array.  
5
I
I/O/Q  
GAL20V8Z  
GAL20V8ZD  
Top View  
I
6
2 3  
2 1  
I
I/O/Q  
NC  
I
7
NC  
I
I
I
I
I/O/Q  
I/O/Q  
8
9
I
Unique test circuitry and reprogrammable cells allow completeAC,  
DC, and functional testing during manufacture. As a result, Lattice  
Semiconductor delivers 100% field programmability and function-  
ality of all GAL products. In addition, 100 erase/write cycles and  
data retention in excess of 20 years are specified.  
9
16  
15  
1 1  
1 9 I/O/Q  
18  
I
I
10  
11  
12  
12  
1 4  
16  
14  
G N D  
1 3  
I/OE  
Copyright © 1997 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject  
to change without notice.  
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.  
Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com  
December 1997  
20v8zzd_03  
1

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