是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 13 weeks |
风险等级: | 5.68 | 其他特性: | HIGH RELIABILITY |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 200 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 50 | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 3 W | 参考标准: | AEC-Q101 |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 110 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FZT956TA | DIODES |
获取价格 |
SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS | |
FZT956TC | DIODES |
获取价格 |
Power Bipolar Transistor, 2A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
FZT957 | DIODES |
获取价格 |
SOT223 PNP SILICON PLANAR HIGH CURRENT | |
FZT957 | ZETEX |
获取价格 |
PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS | |
FZT957Q | DIODES |
获取价格 |
PNP, 300V, 1A, SOT223 | |
FZT957QTA | DIODES |
获取价格 |
Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
FZT957TA | ZETEX |
获取价格 |
Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
FZT957TA | DIODES |
获取价格 |
Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
FZT957TC | DIODES |
获取价格 |
Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
FZT958 | ZETEX |
获取价格 |
PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS |