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FZTA42

更新时间: 2024-11-16 07:00:51
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关光电二极管高压
页数 文件大小 规格书
1页 36K
描述
NPN Silicon Planar High Voltage Transistor

FZTA42 数据手册

  
SMD Type  
Transistors  
NPN Silicon Planar High Voltage Transistor  
FZTA42  
SOT-223  
Unit: mm  
+0.2  
3.50  
-0.2  
+0.2  
6.50  
-0.2  
Features  
+0.2  
0.90  
-0.2  
+0.1  
3.00  
-0.1  
+0.3  
7.00  
-0.3  
Suitable for video output stages in TV sets  
and switch mode power supplies  
High breakdown voltage  
4
1 Base  
2 Collector  
3 Emitter  
4 Collector  
1
2
3
+0.1  
0.70  
-0.1  
2.9  
4.6  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IB  
Rating  
Unit  
V
300  
Collector-Emitter Voltage  
Emitter-Base Voltage  
300  
V
5
V
Base Current  
100  
500  
mA  
mA  
W
Continuous Collector Current  
Power Dissipation at Tamb=25  
Operating and Storage Temperature Range  
IC  
Ptot  
2
Tj:Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Testconditons  
IC=100ìA, IE=0  
Min  
300  
300  
5
Typ  
Max  
Unit  
V
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
IC=1mA, IB=0*  
V
IE=100ìA, IC=0  
V
VCB=200V, IE=0  
VEB=5V, IC=0  
0.1  
0.1  
0.5  
0.9  
ìA  
ìA  
V
Emitter Cut-Off Current  
IEBO  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
VCE(sat)  
VBE(sat)  
IC=20mA, IB=2mA  
IC=20mA, IB=2mA  
IC=1mA, VCE=10V*  
IC=10mA, VCE=10V*  
IC=30mA, VCE=10V*  
V
25  
40  
40  
50  
Static Forward Current Transfer Ratio  
hFE  
Transition Frequency  
Output Capacitance  
fT  
IC=10mA, VCE=20V,f=20MHz  
VCB=20V, f=1MHz  
MHz  
pF  
Cobo  
6
* Measured under pulsed conditions. Pulse width=300ìs. Duty cycle  
2%  
1
www.kexin.com.cn  

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