FZTA14

更新时间： 2024-09-27 10:22:59

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描述
SOT223 NPN SILICON PLANAR

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FZTA14 数据手册

SOT223 NPN SILICON PLANAR

FZTA14

DARLINGTON TRANSISTOR

ISSUE 3 JANUARY 1996

PARTMARKING DETAIL:-

DEVICE TYPE IN FULL

COMPLEMENTARY TYPE :- FZTA64

SOT223

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CES

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector-Emitter Voltage

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_tot

°C

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V_(BR)CES

I_C=100µA, V_BE=0

Collector Cut-Off

Current

I_CBO

100

V_CB=30V, I_E=0

V_EB=10V, I_C=0

Emitter Cut-Off Current I_EBO

Collector-Emitter

Saturation Voltage

V_CE(sat)

1.5

1.6

I_C=100mA, I_B=0.1mA*

I_C=1A, I_B=1mA*

Base-Emitter

Turn-On Voltage

V_BE(on)

2.0

I_C=100mA, V_CE=5V*

Base-Emitter

Saturation Voltage

V_BE(sat)

2.0

2.2

I_C=100mA, I_B=0.1mA

I_C=1A, I_B=1mA

Static Forward Current h_FE

Transfer Ratio

10K

20K

I_C=10mA, V_CE=5V*

I_C=100mA, V_CE=5V*

I_C=1A, V_CE=5V*

Transition Frequency

f_T

170

MHz

I_C=50mA, V_CE=5V*

f=20MHz

*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

For typical characteristics graphs see FMMT38C datasheet.

3 - 301

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