FZT958

更新时间： 2024-11-16 10:22:59

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管功率双极晶体管局域网
页数	文件大小	规格书
5页	104K
描述
SOT223 PNP SILICON PLANAR HIGH CURRENT

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技术参数
数据手册

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FZT958 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.75	风险等级：	5.19
Is Samacsys：	N	Base Number Matches：	1

FZT958 数据手册

SOT223 PNP SILICON PLANAR HIGH CURRENT

(HIGH PERFORMANCE) TRANSISTORS

ISSUE 3 - JANUARY 1996

FZT957

FZT958

FEATURES

1 Amp continuous current

Up to 2 Amps peak current

Very low saturation voltage

Excellent gain characteristics specified up to 1 Amp

COMPLEMENTARY TYPES - FZT957 - FZT857

FZT958 - N/A

PARTMARKING DETAILS -

DEVICE TYPE IN FULL

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

FZT957

-300

FZT958

-400

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-300

-400

-6

Peak Pulse Current

-2

-1

-1.5

-0.5

Continuous Collector Current

Power Dissipation at T_amb=25°C

I_C

P_tot

°C

Operating and Storage Temperature

Range

T_j:T_stg

-55 to +150

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 4 square inch minimum

3 - 289

12 3 4 5

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