5秒后页面跳转
FZT957TA PDF预览

FZT957TA

更新时间: 2024-02-25 22:56:26
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
5页 143K
描述
Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,

FZT957TA 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:0.86外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):90
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):24 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):85 MHz
Base Number Matches:1

FZT957TA 数据手册

 浏览型号FZT957TA的Datasheet PDF文件第2页浏览型号FZT957TA的Datasheet PDF文件第3页浏览型号FZT957TA的Datasheet PDF文件第4页浏览型号FZT957TA的Datasheet PDF文件第5页 
SOT223 PNP SILICON PLANAR HIGH CURRENT  
(HIGH PERFORMANCE) TRANSISTORS  
ISSUE 3 - JANUARY 1996  
FZT957  
FZT958  
FEATURES  
*
*
*
*
1 Amp continuous current  
Up to 2 Amps peak current  
C
Very low saturation voltage  
Excellent gain characteristics specified up to 1 Amp  
E
COMPLEMENTARY TYPES - FZT957 - FZT857  
FZT958 - N/A  
C
B
PARTMARKING DETAILS -  
DEVICE TYPE IN FULL  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
FZT957  
-300  
FZT958  
-400  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-300  
-400  
V
-6  
V
Peak Pulse Current  
-2  
-1  
-1.5  
-0.5  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
A
Ptot  
3
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 4 square inch minimum  
3 - 289  

FZT957TA 替代型号

型号 品牌 替代类型 描述 数据表
FZT957TC DIODES

完全替代

Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
FZT957 DIODES

类似代替

SOT223 PNP SILICON PLANAR HIGH CURRENT
PZT2907AT3G ONSEMI

功能相似

PNP Silicon Epitaxial Transistor

与FZT957TA相关器件

型号 品牌 获取价格 描述 数据表
FZT957TC DIODES

获取价格

Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
FZT958 ZETEX

获取价格

PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
FZT958 DIODES

获取价格

SOT223 PNP SILICON PLANAR HIGH CURRENT
FZT958TA DIODES

获取价格

Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
FZT958TC DIODES

获取价格

Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
FZT968 DIODES

获取价格

SOT223 PNP SILICON PLANAR HIGH CURRENT
FZT968 ZETEX

获取价格

PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) POWER TRANSISTOR
FZT968TA DIODES

获取价格

Power Bipolar Transistor, 6A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4
FZT968TA ZETEX

获取价格

Power Bipolar Transistor, 6A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4
FZT968TC ZETEX

获取价格

Power Bipolar Transistor, 6A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4