Datasheet > FZT969

FZT969

更新时间： 2024-09-26 22:48:55

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管局域网
页数	文件大小	规格书
2页	31K
描述
SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR

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FZT969 数据手册

SOT223 NPN SILICON PLANAR HIGH CURRENT

(HIGH PERFORMANCE) TRANSISTOR

ISSUE 2 - JANUARY 1996

FZT869

FEATURES

Extremely low equivalent on-resistance; R_CE(sat)36mΩ at 5A

7 Amp continuous collector current (20 Amp peak)

Very low saturation voltages

Excellent gain charateristics specified upto 20 Amp

P_tot=3 Watts

PARTMARKING DETAILS -

FZT869

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

P_tot

°C

T_j:T_stg

-55 to +150

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 4 inch square minimum

3 - 271

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