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FZT969 PDF预览

FZT969

更新时间: 2024-11-15 22:48:55
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
2页 31K
描述
SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR

FZT969 数据手册

 浏览型号FZT969的Datasheet PDF文件第2页 
SOT223 NPN SILICON PLANAR HIGH CURRENT  
(HIGH PERFORMANCE) TRANSISTOR  
ISSUE 2 - JANUARY 1996  
FZT869  
FEATURES  
*
*
*
*
*
Extremely low equivalent on-resistance; RCE(sat)36mat 5A  
7 Amp continuous collector current (20 Amp peak)  
Very low saturation voltages  
C
Excellent gain charateristics specified upto 20 Amp  
Ptot =3 Watts  
E
C
PARTMARKING DETAILS -  
FZT869  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
60  
Collector-Emitter Voltage  
Emitter-Base Voltage  
25  
V
6
V
Peak Pulse Current  
20  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
7
3
A
Ptot  
W
°C  
Tj:Tstg  
-55 to +150  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 4 inch square minimum  
3 - 271  

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