生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.56 | 最大集电极电流 (IC): | 3200 A |
集电极-发射极最大电压: | 1700 V | 配置: | COMPLEX |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUFM-X7 |
元件数量: | 2 | 端子数量: | 7 |
最高工作温度: | 125 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 12500 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 1200 ns | 标称接通时间 (ton): | 300 ns |
VCEsat-Max: | 3.1 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FZ1600R17KF6C | EUPEC |
获取价格 |
IGBT-Modules | |
FZ1600R17KF6C_B2 | INFINEON |
获取价格 |
2600A, 1700V, N-CHANNEL IGBT, MODULE-7 | |
FZ1600R17KF6CB2 | ETC |
获取价格 |
IGBT Module | |
FZ1600R17KF6CB2NOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, | |
FZ1600R33HE4 | INFINEON |
获取价格 |
200% PC | |
FZ16R12K4 | ETC |
获取价格 |
IGBT Module | |
FZ1800R12HE4_B9 | INFINEON |
获取价格 |
1200V IHMB 190mm single switch IGBT Module with Trench/Fieldstop IGBT4 and Emitter Control | |
FZ1800R12HE4B9HOSA2 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 2735A I(C), 1200V V(BR)CES, N-Channel, MODULE-9 | |
FZ1800R12HE4B9NPSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 2735A I(C), 1200V V(BR)CES, N-Channel, MODULE-9 | |
FZ1800R12HP4_B9 | INFINEON |
获取价格 |
IHM-B module with soft-switching Trench-IGBT4 |