型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FZ1600R17KF6CB2NOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, | |
FZ1600R33HE4 | INFINEON |
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200% PC | |
FZ16R12K4 | ETC |
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IGBT Module | |
FZ1800R12HE4_B9 | INFINEON |
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1200V IHMB 190mm single switch IGBT Module with Trench/Fieldstop IGBT4 and Emitter Control | |
FZ1800R12HE4B9HOSA2 | INFINEON |
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Insulated Gate Bipolar Transistor, 2735A I(C), 1200V V(BR)CES, N-Channel, MODULE-9 | |
FZ1800R12HE4B9NPSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 2735A I(C), 1200V V(BR)CES, N-Channel, MODULE-9 | |
FZ1800R12HP4_B9 | INFINEON |
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IHM-B module with soft-switching Trench-IGBT4 | |
FZ1800R12HP4B9HOSA2 | INFINEON |
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Insulated Gate Bipolar Transistor, 2700A I(C), 1200V V(BR)CES, N-Channel, MODULE-9 | |
FZ1800R12HP4B9NPSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 2700A I(C), 1200V V(BR)CES, N-Channel, MODULE-9 | |
FZ1800R12KF4 | ETC |
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TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 1.8KA I(C) |