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FZ1600R17KF6CB2 PDF预览

FZ1600R17KF6CB2

更新时间: 2024-11-24 23:53:19
品牌 Logo 应用领域
其他 - ETC 双极性晶体管
页数 文件大小 规格书
8页 131K
描述
IGBT Module

FZ1600R17KF6CB2 数据手册

 浏览型号FZ1600R17KF6CB2的Datasheet PDF文件第2页浏览型号FZ1600R17KF6CB2的Datasheet PDF文件第3页浏览型号FZ1600R17KF6CB2的Datasheet PDF文件第4页浏览型号FZ1600R17KF6CB2的Datasheet PDF文件第5页浏览型号FZ1600R17KF6CB2的Datasheet PDF文件第6页浏览型号FZ1600R17KF6CB2的Datasheet PDF文件第7页 
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ1600R17KF6C B2  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
VCES  
1700  
V
TC = 80 °C  
TC = 25 °C  
IC,nom.  
IC  
1600  
2600  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t
P = 1 ms, TC = 80°C  
ICRM  
3200  
12,5  
+/- 20V  
1600  
3200  
660  
A
kW  
V
Gesamt-Verlustleistung  
total power dissipation  
TC=25°C, Transistor  
Ptot  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
Dauergleichstrom  
DC forward current  
IF  
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
IFRM  
tp = 1 ms  
A
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
kA2s  
kV  
VR = 0V, tp = 10ms, TVj = 125°C  
RMS, f = 50 Hz, t = 1 min.  
Isolations-Prüfspannung  
insulation test voltage  
VISOL  
4
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
IC = 1600A, VGE = 15V, Tvj = 25°C  
VCE sat  
2,6  
3,1  
3,1  
3,6  
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
IC = 1600A, VGE = 15V, Tvj = 125°C  
Gate-Schwellenspannung  
gate threshold voltage  
I
C = 130mA, VCE = VGE, Tvj = 25°C  
VGE(th)  
4,5  
5,5  
19  
6,5  
V
Gateladung  
gate charge  
V
GE = -15V ... +15V  
QG  
µC  
nF  
nF  
Eingangskapazität  
input capacitance  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
Cies  
105  
5,3  
Rückwirkungskapazität  
reverse transfer capacitance  
Cres  
ICES  
VCE = 1700V, VGE = 0V, Tvj = 25°C  
VCE = 1700V, VGE = 0V, Tvj = 125°C  
0,04  
20  
3
mA  
mA  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
160  
Gate-Emitter Reststrom  
gate-emitter leakage current  
V
CE = 0V, VGE = 20V, Tvj = 25°C  
IGES  
400  
nA  
prepared by: Alfons Wiesenthal  
date of publication: 19.01.2001  
revision: 2 (Serie)  
approved by: Christoph Lübke; 06.02.2001  
1(8)  
FZ1600R17KF6C B2.xls  

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