是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-XUFM-X9 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 1 week |
风险等级: | 5.6 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 2700 A | 集电极-发射极最大电压: | 1200 V |
配置: | PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE | JESD-30 代码: | R-XUFM-X9 |
元件数量: | 3 | 端子数量: | 9 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 1330 ns |
标称接通时间 (ton): | 720 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FZ1800R12KF4 | ETC |
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TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 1.8KA I(C) | |
FZ1800R12KL4C | EUPEC |
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Hochstzulassige Werte / Maximum rated values | |
FZ1800R16KF4 | ETC |
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TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.6KV V(BR)CES | 1.8KA I(C) | |
FZ1800R17HE4_B9 | INFINEON |
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Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-9 | |
FZ1800R17HE4B9HOSA2 | INFINEON |
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Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-9 | |
FZ1800R17HE4B9NPSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-9 | |
FZ1800R17HP4_B29 | INFINEON |
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IHM-B module with soft-switching Trench-IGBT4 | |
FZ1800R17HP4_B9 | INFINEON |
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IHM-B module with soft-switching Trench-IGBT4 | |
FZ1800R17HP4B29BOSA2 | INFINEON |
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Insulated Gate Bipolar Transistor, | |
FZ1800R17KE3_B2 | EUPEC |
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IGBT-modules |