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FS100R12KT3_04

更新时间： 2024-11-18 10:24:31
品牌 Logo 应用领域
EUPEC 二极管双极性晶体管
页数 文件大小 规格书
8页 341K
描述
EconoPACK3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode

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中文翻译

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FS100R12KT3_04 数据手册

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Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FS100R12KT3  
EconoPACK™3 Modul mit schnellem Trench/Feldstop IGBT3 und High Efficiency Diode  
EconoPACK™3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode  
IGBT-Wechselrichter / IGBT-inverter  
Vorläufige Daten / preliminary data  
Höchstzulässige Werte / maximum rated values  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
V†Š»  
1200  
V
Kollektor-Dauergleichstrom  
DC-collector current  
T† = 80°C, TÝÎ = 150°C  
T† = 25°C, TÝÎ = 150°C  
I† ÒÓÑ  
I†  
100  
140  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms  
I†ç¢  
PÚÓÚ  
200  
480  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
T† = 25°C, TÝÎ = 150°C  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
+/-20  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 100 A, V•Š = 15 V  
I† = 100 A, V•Š = 15 V  
TÝÎ = 25°C  
TÝÎ = 125°C  
1,70 2,15  
1,90  
V
V
V†Š ÙÈÚ  
V•ŠÚÌ  
Q•  
Gate-Schwellenspannung  
gate threshold voltage  
I† = 4,00 mA, V†Š = V•Š, TÝÎ = 25°C  
V•Š = -15 V ... +15 V  
5,0  
5,8  
0,90  
7,5  
6,5  
V
µC  
Â
Gateladung  
gate charge  
Interner Gatewiderstand  
internal gate resistor  
TÝÎ = 25°C  
R•ÍÒÚ  
CÍþÙ  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
7,10  
0,30  
nF  
nF  
mA  
nA  
Rückwirkungskapazität  
reverse transfer capacitance  
CØþÙ  
I†Š»  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
5,0  
Gate-Emitter Reststrom  
gate-emitter leakage current  
I•Š»  
tÁ ÓÒ  
400  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 100 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓÒ = 3,9 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,26  
0,29  
µs  
µs  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 100 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓÒ = 3,9 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,03  
0,05  
µs  
µs  
tØ  
tÁ ÓËË  
tË  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 100 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓËË = 3,9 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,42  
0,52  
µs  
µs  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 100 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓËË = 3,9 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,07  
0,09  
µs  
µs  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 100 A, V†Š = 600 V  
V•Š = ±15 V, L» = 70 nH  
R•ÓÒ = 3,9 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
mJ  
mJ  
EÓÒ  
10,0  
10,0  
400  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 100 A, V†Š = 600 V  
V•Š = ±15 V, L» = 70 nH  
R•ÓËË = 3,9 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
mJ  
mJ  
EÓËË  
Kurzschlussverhalten  
SC data  
t« ù 10 µs, V•Š ù 15 V  
TÝÎ = 125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  
I»†  
A
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro IGBT  
per IGBT  
RÚÌœ†  
0,26 K/W  
K/W  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro IGBT / per IGBT  
ð«ÈÙÚþ = 1 W/(m·K)  
RÚ̆™  
0,09  
/
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Mark Münzer  
approved by: Robert Severin  
date of publication: 2004-11-16  
revision: 2.1  
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