Datasheet > FQU2N50BTU-WS

FQU2N50BTU-WS

更新时间： 2024-11-22 11:14:03

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
9页	909K
描述
N 沟道 QFET® MOSFET

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FQU2N50BTU-WS 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	IN-LINE, R-PSIP-T3	Reach Compliance Code：	not_compliant
风险等级：	0.78	雪崩能效等级（Eas）：	120 mJ
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	500 V
最大漏极电流 (Abs) (ID)：	1.6 A	最大漏极电流 (ID)：	1.6 A
最大漏源导通电阻：	5.3 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-251AA	JESD-30 代码：	R-PSIP-T3
JESD-609代码：	e3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	IN-LINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	30 W	最大脉冲漏极电流 (IDM)：	6.4 A
子类别：	FET General Purpose Power	表面贴装：	NO
端子面层：	Tin (Sn)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FQU2N50BTU-WS 数据手册

ON Semiconductor

Is Now

To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

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与FQU2N50BTU-WS相关器件

型号	品牌	获取价格	描述	数据表
FQU2N50TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1.6A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Met
FQU2N60	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQU2N60C	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQU2N60C	KERSEMI	获取价格	N-Channel QFET MOSFET
FQU2N60CTU	FAIRCHILD	获取价格	Low Gate Charge (Typ. 8.5 nC)
FQU2N60CTU	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，600 V，1.9 A，4.7 Ω，IPAK
FQU2N60TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal
FQU2N60TU	ROCHESTER	获取价格	2A, 600V, 4.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3
FQU2N80	FAIRCHILD	获取价格	800V N-Channel MOSFET
FQU2N80TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Met

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