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FQPF16N25C PDF预览

FQPF16N25C

更新时间: 2024-11-15 22:25:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 1138K
描述
250V N-Channel MOSFET

FQPF16N25C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220F
包装说明:TO-220F, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.88
雪崩能效等级(Eas):410 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):15.6 A最大漏极电流 (ID):15.6 A
最大漏源导通电阻:0.27 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):43 W最大脉冲漏极电流 (IDM):62.4 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQPF16N25C 数据手册

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QFET®  
FQP16N25C/FQPF16N25C  
250V N-Channel MOSFET  
General Description  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
Features  
15.6A, 250V, RDS(on) = 0.27@VGS = 10 V  
Low gate charge ( typical 41 nC)  
Low Crss ( typical 68 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switching DC/DC converters,  
switch mode power supplies, DC-AC converters for  
uninterrupted power supplies and motor controls.  
D
{
{
G
TO-220F  
TO-220  
G D  
S
G
D S  
FQPF Series  
FQP Series  
{
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
VDSS  
Parameter  
FQP16N25C  
FQPF16N25C  
250  
Units  
V
Drain-Source Voltage  
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
Drain Current  
15.6  
9.8  
62.4  
15.6 *  
9.8 *  
62.4 *  
A
A
A
IDM  
(Note 1)  
Drain Current  
VGSS  
EAS  
IAR  
EAR  
dv/dt  
PD  
Gate-Source Voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TC = 25°C)  
± 30  
410  
15.6  
13.9  
5.5  
V
mJ  
A
mJ  
V/ns  
W
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
139  
43  
- Derate above 25°C  
Operating and Storage Temperature Range  
1.11  
0.34  
W/°C  
°C  
TJ, TSTG  
TL  
-55 to +150  
300  
Maximum lead temperature for soldering purposes,  
°C  
1/8" from case for 5 seconds  
* Drain current limited by maximum junction temperature.  
Thermal Characteristics  
Symbol  
Parameter  
FQP16N25C  
FQPF16N25C  
Units  
°C/W  
°C/W  
°C/W  
RθJC  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink Typ.  
Thermal Resistance, Junction-to-Ambient  
0.9  
0.5  
62.5  
2.89  
--  
62.5  
RθJS  
RθJA  
©2004 Fairchild Semiconductor Corporation  
Rev. A, March 2004  

FQPF16N25C 替代型号

型号 品牌 替代类型 描述 数据表
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