Datasheet > FQPF20N06L

FQPF20N06L

更新时间： 2024-11-15 22:51:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	663K
描述
60V LOGIC N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FQPF20N06L 数据手册

May 2001

QFET

FQPF20N06L

60V LOGIC N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as automotive, DC/

DC converters, and high efficiency switching for power

management in portable and battery operated products.

•

15.7A, 60V, R

= 0.055Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 9.5 nC)

Low Crss ( typical 35 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

175°C maximum junction temperature rating

! "

G !

G D

TO-220F

FQPF Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQPF20N06L

Units

Drain-Source Voltage

15.7

11.1

62.8

± 20

170

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

15.7

3.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

7.0

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.2

W/°C

°C

T , T

-55 to +175

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

5.00

62.5

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

θJC

θJA

Rev. A1. May 2001

12 3 4 5 6 7 8

中文翻译

下载PDF

与FQPF20N06L相关器件

型号	品牌	获取价格	描述	数据表
FQPF22N30	FAIRCHILD	获取价格	300V N-Channel MOSFET
FQPF22N30	ONSEMI	获取价格	N 沟道，QFET® MOSFET，300V，12A，160mΩ
FQPF22P10	FAIRCHILD	获取价格	100V P-Channel MOSFET
FQPF22P10	ONSEMI	获取价格	功率 MOSFET，P 沟道，QFET®，-100 V，-13.2 A，125 mΩ，TO
FQPF24N08	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 17A I(D) \| TO-220F
FQPF26N03L	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 18A I(D) \| TO-220F
FQPF27N25	FAIRCHILD	获取价格	250V N-Channel MOSFET
FQPF27N25	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，250 V，14 A，110 mΩ，TO-220
FQPF27P06	FAIRCHILD	获取价格	60V P-Channel MOSFET
FQPF27P06	ONSEMI	获取价格	功率 MOSFET，P 沟道，QFET®，-60 V，-17 A，26 mΩ，TO-220