May 2001
TM
QFET
FQPF26N03L
30V LOGIC N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as DC/DC
converters, high efficiency switching for power
management in portable and battery operated products.
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18A, 30V, R
= 0.037Ω @V = 10 V
DS(on) GS
Low gate charge ( typical 8.0 nC)
Low Crss ( typical 60 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
D
!
"
! "
"
!
G
"
G D
S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQPF26N03L
Units
V
V
I
Drain-Source Voltage
30
18
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
12.7
72
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
± 20
150
V
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
AS
18
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
2.6
mJ
V/ns
W
AR
dv/dt
7.0
P
Power Dissipation (T = 25°C)
26
D
C
- Derate above 25°C
Operating and Storage Temperature Range
0.18
-55 to +175
W/°C
°C
T , T
J
STG
Maximum lead temperature for soldering purposes,
T
300
°C
L
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Typ
Max
5.56
62.5
Units
°C/W
°C/W
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
--
--
θJC
θJA
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001