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FQPF2P40 PDF预览

FQPF2P40

更新时间: 2024-11-24 22:51:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 573K
描述
400V P-Channel MOSFET

FQPF2P40 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220F包装说明:TO-220F, 3 PIN
针数:3Reach Compliance Code:not_compliant
风险等级:5.27雪崩能效等级(Eas):120 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:400 V
最大漏极电流 (Abs) (ID):1.34 A最大漏极电流 (ID):1.34 A
最大漏源导通电阻:6.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):28 W
最大脉冲漏极电流 (IDM):5.36 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQPF2P40 数据手册

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December 2000  
TM  
QFET  
FQPF2P40  
400V P-Channel MOSFET  
General Description  
Features  
These P-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
-1.34A, -400V, R  
= 6.5@V = -10 V  
DS(on) GS  
Low gate charge ( typical 10 nC)  
Low Crss ( typical 6.5 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
This advanced technology is especially tailored to minimize  
on-state  
resistance,  
provide  
superior  
switching  
performance, and withstand a high energy pulse in the  
avalanche and commutation modes. These devices are  
well suited for electronic lamp ballasts based on the  
complementary half bridge topology.  
S
!
G!  
G D  
!
D
S
TO-220F  
FQPF Series  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQPF2P40  
-400  
Units  
V
V
I
Drain-Source Voltage  
DSS  
- Continuous (T = 25°C)  
Drain Current  
-1.34  
-0.85  
-5.36  
± 30  
A
D
C
- Continuous (T = 100°C)  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
120  
mJ  
A
-1.34  
2.8  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
mJ  
V/ns  
W
AR  
dv/dt  
-4.5  
P
Power Dissipation (T = 25°C)  
28  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.22  
W/°C  
°C  
T , T  
-55 to +150  
J
STG  
Maximum lead temperature for soldering purposes,  
1/8from case for 5 seconds  
T
300  
°C  
L
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
4.46  
62.5  
θJC  
θJA  
--  
©2000 Fairchild Semiconductor International  
Rev. A2, December 2000  

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