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FQPF3N80C PDF预览

FQPF3N80C

更新时间： 2024-11-26 11:15:15
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 886K
描述
功率 MOSFET，N 沟道，QFET®，800 V，3.0 A，4.8 Ω，TO-220F

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中文翻译

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FQPF3N80C 技术参数

是否无铅：不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.7
Is Samacsys：N雪崩能效等级（Eas）：320 mJ
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：800 V最大漏极电流 (Abs) (ID)：3 A
最大漏极电流 (ID)：3 A最大漏源导通电阻：4.8 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：39 W
最大脉冲漏极电流 (IDM)：12 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FQPF3N80C 数据手册

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FQPF3N80C 替代型号

型号 品牌 替代类型 描述 数据表
FQPF3N80CYDTU FAIRCHILD

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 Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal

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