Datasheet > FQPF4N60

FQPF4N60

更新时间： 2024-11-25 12:34:23

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	726K
描述
600V N-Channel MOSFET

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FQPF4N60 数据手册

April 2000

FQPF4N60

600V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Corise Semiconductorÿs proprietary,

planar stripe, DMOS technology.

•

2.6A, 600V, R

= 2.2Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 15 nC)

Low Crss ( typical 8.0 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

! "

G D

TO-220F

FQPF Series

Absolute Maximum Ratings

ꢀꢀ

= 25°C unless otherwise noted

Symbol

Parameter

FQFP4N60

600

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

2.6

- Continuous (T = 100°C)

1.64

(Note 1)

Drain Current

- Pulsed

10.4

Gate-Source Voltage

±ꢀ30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

260

2.6

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

3.6

V/ns

dv/dt

4.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.29

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8ꢀ from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

3.47

62.5

Units

°CꢁW

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

12 3 4 5 6 7

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