Datasheet > FQPF5N50C

FQPF5N50C

更新时间： 2024-11-25 20:27:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	889K
描述
500V N-Channel Advance QFET® C-Series, TO-220F 3L, 1000-RAIL

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中文翻译

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技术参数
数据手册

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FQPF5N50C 技术参数

是否无铅：	不含铅	生命周期：	Obsolete
Reach Compliance Code：	compliant	Factory Lead Time：	1 week
风险等级：	5.75	Base Number Matches：	1

FQPF5N50C 数据手册

QFET

FQP5N50C/FQPF5N50C

500V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction, electronic lamp ballasts

based on half bridge topology.

•

5A, 500V, R

= 1.4 Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 18nC)

Low Crss ( typical 15pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

◀

▲

●

TO-220F

FQPF Series

TO-220

FQP Series

G D

D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQP5N50C

FQPF5N50C

Units

Drain-Source Voltage

500

DSS

- Continuous (T = 25°C)

Drain Current

5 *

- Continuous (T = 100°C)

2.9

2.9 *

20 *

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

300

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

7.3

4.5

V/ns

dv/dt

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.58

0.3

W/°C

°C

T , T

-55 to +150

300

STG

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

FQP5N50C

FQPF5N50C

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

1.71

0.5

3.31

θJC

θJS

62.5

θJA

Rev. A, April 2003

12 3 4 5 6 7...10

中文翻译

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与FQPF5N50C相关器件

型号	品牌	获取价格	描述	数据表
FQPF5N50CF	FAIRCHILD	获取价格	500V N-Channel MOSFET
FQPF5N50CFTU	FAIRCHILD	获取价格	Low gate charge ( typical 18nC)
FQPF5N50CFTU_NL	FAIRCHILD	获取价格	暂无描述
FQPF5N50CT	FAIRCHILD	获取价格	暂无描述
FQPF5N50CT_NL	FAIRCHILD	获取价格	暂无描述
FQPF5N50CYDTU	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，500 V，5 A，1.4 Ω，TO-220F
FQPF5N50CYDTU	FAIRCHILD	获取价格	500V N-Channel Advance QFET® C-Series, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, Y
FQPF5N60	KERSEMI	获取价格	600V N-Channel MOSFET
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