Datasheet > FQPF47P06

FQPF47P06

更新时间： 2024-11-26 11:13:59

品牌	Logo	应用领域
安森美 - ONSEMI		局域网开关脉冲晶体管
页数	文件大小	规格书
10页	314K
描述
功率 MOSFET，P 沟道，QFET®，-60 V，-30 A，26 mΩ，TO-220F

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FQPF47P06 数据手册

DATA SHEET

www.onsemi.com

MOSFET – P-Channel, QFET⁾

DSS

MAX

I MAX

DS(ON)

-60 V, -30 A, 26 mW

−60 V

26 mW @ −10 V

−30 A

FQPF47P06,

FQPF47P06YDTU

Description

This P−Channel enhancement mode power MOSFET is produced

using onsemi’s proprietary planar stripe and DMOS technology. This

advanced MOSFET technology has been especially tailored to reduce

on−state resistance, and to provide superior switching performance

and high avalanche energy strength. These devices are suitable

for switched mode power supplies, audio amplifier, DC motor control,

and variable switching power applications.

P−Channel MOSFET

Features

• −30 A, −60 V, R

= 26 mW (Max.) @ V = −10 V, I = −15 A

GS D

TO−220F

DS(on)

• Low Gate Charge (Typ. 84 nC)

• Low Crss (Typ. 320 pF)

• 100% Avalanche Tested

TO−220 Fullpack, 3−Lead / TO−220F−3SG

CASE 221AT

• 175°C Maximum Junction Temperature Rating

TO−220−3LD LF

CASE 340BJ

MARKING DIAGRAM

$Y&Z&3&K

FQPF

47P06

= onsemi Logo

= Assembly Plant Code

= 3−Digit Plant Code

= 2−Digits Lot Run Traceability Code

FQPF47P06 = Specific Device Code

ORDERING INFORMATION

Package

Device

Shipping

FQPF47P06

TO−220−3 1000 Units / Tube

(Pb−Free)

FQPF47P06YDTU TO−220−3

(Pb−Free)

800 Units / Tube

Publication Order Number:

February, 2022 − Rev. 3

FQPF47P06/D

12 3 4 5 6 7...10

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