April 2006
®
QFET
FQP2N60C/FQPF2N60C
2.0A, 600V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
•
•
•
•
•
•
rDS(on) = 4.7Ω @ VGS = 10 V
Low gate charge (typical 8.5 nC)
Low Crss (typical 4.3 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
S
G
TO-220F
FQPF Series
TO-220
FQP Series
G D
S
G
D S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
VDSS
Parameter
FQP2N60C
FQPF2N60C
Units
V
Drain-Source Voltage
600
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
2.0
1.35
8
2.0 *
1.35 *
8 *
A
A
IDM
(Note 1)
Drain Current
A
VGSS
EAS
IAR
Gate-Source Voltage
± 30
120
2.0
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
5.4
mJ
V/ns
W
dv/dt
PD
4.5
54
23
- Derate above 25°C
Operating and Storage Temperature Range
0.43
0.18
W/°C
°C
TJ, TSTG
TL
-55 to +150
300
Maximum lead temperature for soldering purposes,
°C
1/8∀ from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
Parameter
FQP2N60C
2.32
FQPF2N60C
Units
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
5.5
--
RθCS
RθJA
0.5
62.5
62.5
©2006 Fairchild Semiconductor Corporation
FQP2N60C/FQPF2N60C, Rev. A1
www.fairchildsemi.com