Datasheet > FQPF2N60C-F105

FQPF2N60C-F105

更新时间： 2024-11-27 21:16:59

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飞兆/仙童 - FAIRCHILD		/
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FQPF2N60C-F105 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	Base Number Matches：	1

FQPF2N60C-F105 数据手册

April 2006

QFET

FQP2N60C/FQPF2N60C

2.0A, 600V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction, electronic lamp ballasts

based on half bridge topology.

•

r_DS(on)= 4.7Ω @ V_GS= 10 V

Low gate charge (typical 8.5 nC)

Low Crss (typical 4.3 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

TO-220F

FQPF Series

TO-220

FQP Series

G D

D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

V_DSS

Parameter

FQP2N60C

FQPF2N60C

Units

Drain-Source Voltage

600

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

Drain Current

2.0

1.35

2.0 *

1.35 *

8 *

I_DM

(Note 1)

Drain Current

V_GSS

E_AS

I_AR

Gate-Source Voltage

± 30

120

2.0

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25°C)

5.4

V/ns

dv/dt

P_D

4.5

- Derate above 25°C

Operating and Storage Temperature Range

0.43

0.18

W/°C

°C

T_J, T_STG

T_L

-55 to +150

300

Maximum lead temperature for soldering purposes,

°C

1/8∀ from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

FQP2N60C

2.32

FQPF2N60C

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

5.5

R_θCS

R_θJA

0.5

62.5

FQP2N60C/FQPF2N60C, Rev. A1

www.fairchildsemi.com

12 3 4 5 6 7...10

中文翻译

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