5秒后页面跳转
FQPF2N60C-F105 PDF预览

FQPF2N60C-F105

更新时间: 2024-11-06 21:16:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 1366K
描述
Transistor

FQPF2N60C-F105 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84Base Number Matches:1

FQPF2N60C-F105 数据手册

 浏览型号FQPF2N60C-F105的Datasheet PDF文件第2页浏览型号FQPF2N60C-F105的Datasheet PDF文件第3页浏览型号FQPF2N60C-F105的Datasheet PDF文件第4页浏览型号FQPF2N60C-F105的Datasheet PDF文件第5页浏览型号FQPF2N60C-F105的Datasheet PDF文件第6页浏览型号FQPF2N60C-F105的Datasheet PDF文件第7页 
April 2006  
®
QFET  
FQP2N60C/FQPF2N60C  
2.0A, 600V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switched mode power supplies,  
active power factor correction, electronic lamp ballasts  
based on half bridge topology.  
rDS(on) = 4.7Ω @ VGS = 10 V  
Low gate charge (typical 8.5 nC)  
Low Crss (typical 4.3 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
S
G
TO-220F  
FQPF Series  
TO-220  
FQP Series  
G D  
S
G
D S  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
VDSS  
Parameter  
FQP2N60C  
FQPF2N60C  
Units  
V
Drain-Source Voltage  
600  
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
Drain Current  
2.0  
1.35  
8
2.0 *  
1.35 *  
8 *  
A
A
IDM  
(Note 1)  
Drain Current  
A
VGSS  
EAS  
IAR  
Gate-Source Voltage  
± 30  
120  
2.0  
V
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
EAR  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TC = 25°C)  
5.4  
mJ  
V/ns  
W
dv/dt  
PD  
4.5  
54  
23  
- Derate above 25°C  
Operating and Storage Temperature Range  
0.43  
0.18  
W/°C  
°C  
TJ, TSTG  
TL  
-55 to +150  
300  
Maximum lead temperature for soldering purposes,  
°C  
1/8from case for 5 seconds  
* Drain current limited by maximum junction temperature.  
Thermal Characteristics  
Symbol  
RθJC  
Parameter  
FQP2N60C  
2.32  
FQPF2N60C  
Units  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink Typ.  
Thermal Resistance, Junction-to-Ambient  
5.5  
--  
RθCS  
RθJA  
0.5  
62.5  
62.5  
©2006 Fairchild Semiconductor Corporation  
FQP2N60C/FQPF2N60C, Rev. A1  
www.fairchildsemi.com  

与FQPF2N60C-F105相关器件

型号 品牌 获取价格 描述 数据表
FQPF2N70 FAIRCHILD

获取价格

700V N-Channel MOSFET
FQPF2N70 ONSEMI

获取价格

功率 MOSFET,N 沟道,QFET®,700 V,2.0 A,6.3 Ω,TO-220
FQPF2N80 FAIRCHILD

获取价格

800V N-Channel MOSFET
FQPF2N80 ONSEMI

获取价格

N 沟道,QFET® MOSFET,800V,1.5A,6.3Ω
FQPF2N80YDTU ONSEMI

获取价格

N 沟道 QFET® MOSFET
FQPF2N90 FAIRCHILD

获取价格

900V N-Channel MOSFET
FQPF2NA90 FAIRCHILD

获取价格

900V N-Channel MOSFET
FQPF2P25 FAIRCHILD

获取价格

250V P-Channel MOSFET
FQPF2P40 FAIRCHILD

获取价格

400V P-Channel MOSFET
FQPF30N06 FAIRCHILD

获取价格

60V N-Channel MOSFET