Datasheet > FQPF24N08

FQPF24N08

更新时间： 2024-09-28 23:52:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	694K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 17A I(D) \| TO-220F

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中文翻译

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数据手册

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FQPF24N08 数据手册

August 2000

QFET

FQPF24N08

80V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as automotive, high

efficiency switching for DC/DC converters, and DC motor

control.

•

17A, 80V, R_DS(on)= 0.06Ω @V_GS= 10 V

Low gate charge ( typical 19 nC)

Low Crss ( typical 50 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

175°C maximum junction temperature rating

! "

G D

TO-220F

FQPF Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

V_DSS

Parameter

FQPF24N08

Units

Drain-Source Voltage

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

Drain Current

I_DM

(Note 1)

Drain Current

V_GSS

E_AS

I_AR

Gate-Source Voltage

± 25

230

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25°C)

3.8

V/ns

dv/dt

P_D

6.5

- Derate above 25°C

Operating and Storage Temperature Range

0.25

-55 to +175

W/°C

°C

T_J, T_STG

T_L

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

3.95

62.5

Units

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Rev. A, August 2000

12 3 4 5 6 7 8

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