Datasheet > FQP10N60C

FQP10N60C

更新时间： 2024-09-28 12:05:07

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
9页	1026K
描述
600V N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FQP10N60C 数据手册

FQP10N60C/FQPF10N60C

600V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Corise Semiconductorÿs proprietary,

planar stripe, DMOS technology.

•

9.5A, 600V, R

= 0.73Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 44 nC)

Low Crss ( typical 18 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

●

◀

▲

●

TO-220F

FQPF Series

TO-220

FQP Series

G D

D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQP10N60C

FQPF10N60C

600

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

9.5

3.3

9.5 *

3.3 *

38 *

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

700

9.5

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

15.6

4.5

V/ns

dv/dt

Power Dissipation (T = 25°C)

156

- Derate above 25°C

Operating and Storage Temperature Range

1.25

0.4

W/°C

°C

T , T

-55 to +150

300

STG

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

FQP10N60C

FQPF10N60C

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

0.8

0.5

2.5

θJC

θCS

62.5

θJA

12 3 4 5 6 7...9

中文翻译

下载PDF

与FQP10N60C相关器件

型号	品牌	获取价格	描述	数据表
FQP10N60C_07	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQP10N60C_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Me
FQP10N60CF	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQP11N40	FAIRCHILD	获取价格	400V N-Channel MOSFET
FQP11N40C	FAIRCHILD	获取价格	400V N-Channel MOSFET
FQP11N40C	ONSEMI	获取价格	N 沟道 QFET® MOSFET 400V，10.5A，530mΩ
FQP11N40C_08	FAIRCHILD	获取价格	400V N-Channel MOSFET
FQP11N40TSTU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 11.4A I(D), 400V, 0.48ohm, 1-Element, N-Channel, Silicon, M
FQP11N50CF	FAIRCHILD	获取价格	500V N-Channel MOSFET
FQP11P06	FAIRCHILD	获取价格	60V P-Channel MOSFET