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FQP12N60C PDF预览

FQP12N60C

更新时间： 2024-11-17 11:14:31
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 1851K
描述
功率 MOSFET，N 沟道，QFET®， 600 V，12 A，650 mΩ，TO-220

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中文翻译

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FQP12N60C 技术参数

是否无铅：不含铅生命周期：Not Recommended
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：4 weeks风险等级：6.9
Is Samacsys：N雪崩能效等级（Eas）：870 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：600 V
最大漏极电流 (ID)：12 A最大漏源导通电阻：0.65 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：48 A
认证状态：Not Qualified表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FQP12N60C 数据手册

 浏览型号FQP12N60C的Datasheet PDF文件第2页浏览型号FQP12N60C的Datasheet PDF文件第3页浏览型号FQP12N60C的Datasheet PDF文件第4页浏览型号FQP12N60C的Datasheet PDF文件第5页浏览型号FQP12N60C的Datasheet PDF文件第6页浏览型号FQP12N60C的Datasheet PDF文件第7页 
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中文翻译

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FQP12N60C 替代型号

型号 品牌 替代类型 描述 数据表
FQP12N60C FAIRCHILD

功能相似

 FQP12N60C/FQPF12N60C
FQP12N60 FAIRCHILD

功能相似

 600V N-Channel MOSFET

与FQP12N60C相关器件

型号 品牌 获取价格 描述 数据表
FQP12N60C_07 FAIRCHILD

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 		600V N-Channel MOSFET
FQP12N60J69Z FAIRCHILD

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 		Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Me
FQP12P10 ONSEMI

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 		功率 MOSFET，P 沟道，QFET®，-100 V，-11.5 A，290 mΩ，TO
FQP12P10 FAIRCHILD

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 		100V P-Channel MOSFET
FQP12P20 FAIRCHILD

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 		200V P-Channel MOSFET
FQP12P20 ONSEMI

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 		功率 MOSFET，P 沟道，QFET®，-200 V，-11.5 A，470 mΩ，TO
FQP12P20_NL FAIRCHILD

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 		Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, M
FQP12P20J69Z FAIRCHILD

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 		Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, M
FQP13N06 FAIRCHILD

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 		60V N-Channel MOSFET
FQP13N06_NL FAIRCHILD

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 		Power Field-Effect Transistor, 13A I(D), 60V, 0.135ohm, 1-Element, N-Channel, Silicon, Met

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