是否无铅: | 不含铅 | 生命周期: | Not Recommended |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 4 weeks | 风险等级: | 6.9 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 870 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (ID): | 12 A | 最大漏源导通电阻: | 0.65 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 48 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FQP12N60C | FAIRCHILD |
功能相似 |
FQP12N60C/FQPF12N60C | |
FQP12N60 | FAIRCHILD |
功能相似 |
600V N-Channel MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQP12N60C_07 | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
FQP12N60J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Me | |
FQP12P10 | ONSEMI |
获取价格 |
功率 MOSFET,P 沟道,QFET®,-100 V,-11.5 A,290 mΩ,TO | |
FQP12P10 | FAIRCHILD |
获取价格 |
100V P-Channel MOSFET | |
FQP12P20 | FAIRCHILD |
获取价格 |
200V P-Channel MOSFET | |
FQP12P20 | ONSEMI |
获取价格 |
功率 MOSFET,P 沟道,QFET®,-200 V,-11.5 A,470 mΩ,TO | |
FQP12P20_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, M | |
FQP12P20J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, M | |
FQP13N06 | FAIRCHILD |
获取价格 |
60V N-Channel MOSFET | |
FQP13N06_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 60V, 0.135ohm, 1-Element, N-Channel, Silicon, Met |