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FQP12N60C PDF预览

FQP12N60C

更新时间: 2024-11-17 11:14:31
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 1851K
描述
功率 MOSFET,N 沟道,QFET®, 600 V,12 A,650 mΩ,TO-220

FQP12N60C 技术参数

是否无铅:不含铅生命周期:Not Recommended
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:4 weeks风险等级:6.9
Is Samacsys:N雪崩能效等级(Eas):870 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):12 A最大漏源导通电阻:0.65 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):48 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQP12N60C 数据手册

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FQP12N60C 替代型号

型号 品牌 替代类型 描述 数据表
FQP12N60C FAIRCHILD

功能相似

FQP12N60C/FQPF12N60C
FQP12N60 FAIRCHILD

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600V N-Channel MOSFET

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