生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 4 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 48 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQD5N50CTM_WS | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal | |
FQD5N50CTM-WS | ONSEMI |
获取价格 |
Power MOSFET, N-Channel, QFET®, 500 V, 4 A, 1 | |
FQD5N50TF | ROCHESTER |
获取价格 |
3.5A, 500V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | |
FQD5N50TM | ROCHESTER |
获取价格 |
3.5A, 500V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | |
FQD5N60C | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
FQD5N60C_08 | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
FQD5N60CTF | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
FQD5N60CTM | FAIRCHILD |
获取价格 |
N-Channel QFET MOSFET | |
FQD5N60CTM | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,600 V,2.8 A,2.5 Ω,DPAK | |
FQD5N60CTM_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Met |