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FQD5N50CTM_F105 PDF预览

FQD5N50CTM_F105

更新时间: 2024-09-29 14:50:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 628K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

FQD5N50CTM_F105 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
配置:Single最大漏极电流 (Abs) (ID):4 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):48 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

FQD5N50CTM_F105 数据手册

 浏览型号FQD5N50CTM_F105的Datasheet PDF文件第2页浏览型号FQD5N50CTM_F105的Datasheet PDF文件第3页浏览型号FQD5N50CTM_F105的Datasheet PDF文件第4页浏览型号FQD5N50CTM_F105的Datasheet PDF文件第5页浏览型号FQD5N50CTM_F105的Datasheet PDF文件第6页浏览型号FQD5N50CTM_F105的Datasheet PDF文件第7页 
TM  
QFET  
FQD5N50C / FQU5N50C  
500V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switched mode power supplies,  
active power factor correction, electronic lamp ballasts  
based on half bridge topology.  
4.0A, 500V, R  
= 1.4 @V = 10 V  
DS(on) GS  
Low gate charge ( typical 18nC)  
Low Crss ( typical 15pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
D
G!  
I-PAK  
FQU Series  
D-PAK  
FQD Series  
G
S
G D S  
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQD5N50C / FQU5N50C  
Units  
V
V
I
Drain-Source Voltage  
500  
DSS  
- Continuous (T = 25°C)  
Drain Current  
4
2.4  
A
D
C
- Continuous (T = 100°C)  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
16  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
300  
4
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
4.8  
mJ  
V/ns  
W
AR  
dv/dt  
4.5  
Power Dissipation (T = 25°C)*  
2.5  
A
P
Power Dissipation (T = 25°C)  
48  
W
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.38  
-55 to +150  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
Max  
2.6  
50  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
-
-
-
θJC  
θJA  
θJA  
110  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2003 Fairchild Semiconductor Corporation  
Rev. A, October 2003  

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