型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQD5N60CTF | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET |
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FQD5N60CTM | FAIRCHILD |
获取价格 |
N-Channel QFET MOSFET |
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FQD5N60CTM | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,600 V,2.8 A,2.5 Ω,DPAK |
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FQD5N60CTM_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Met |
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FQD5P10 | FAIRCHILD |
获取价格 |
100V P-Channel MOSFET |
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FQD5P10_08 | FAIRCHILD |
获取价格 |
100V P-Channel MOSFET |
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FQD5P10TF | ROCHESTER |
获取价格 |
3.6A, 100V, 1.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 |
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FQD5P10TM | ROCHESTER |
获取价格 |
3.6A, 100V, 1.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 |
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FQD5P10TM | ONSEMI |
获取价格 |
功率 MOSFET,P 沟道,QFET®,-100 V,-3.6 A,1.05 Ω,DPA |
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FQD5P10TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Me |
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