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FQD5P20TM PDF预览

FQD5P20TM

更新时间： 2023-09-03 20:32:51
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
11页 1284K
描述
功率 MOSFET，P 沟道，QFET®，-200 V，-3.7 A，1.4 Ω，DPAK

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中文翻译

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FQD5P20TM 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.79
雪崩能效等级（Eas）：330 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：200 V
最大漏极电流 (Abs) (ID)：3.7 A最大漏极电流 (ID)：3.7 A
最大漏源导通电阻：1.4 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252JESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：45 W
最大脉冲漏极电流 (IDM)：14.8 A认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON

FQD5P20TM 数据手册

 浏览型号FQD5P20TM的Datasheet PDF文件第2页浏览型号FQD5P20TM的Datasheet PDF文件第3页浏览型号FQD5P20TM的Datasheet PDF文件第4页浏览型号FQD5P20TM的Datasheet PDF文件第5页浏览型号FQD5P20TM的Datasheet PDF文件第6页浏览型号FQD5P20TM的Datasheet PDF文件第7页 
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中文翻译

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FQD5P20TM 替代型号

型号 品牌 替代类型 描述 数据表
IRFR9220PBF VISHAY

功能相似

 Power MOSFET
IRFR9220TRPBF VISHAY

功能相似

 Power MOSFET
FQD5P20 FAIRCHILD

功能相似

 200V P-Channel MOSFET

与FQD5P20TM相关器件

型号 品牌 获取价格 描述 数据表
FQD60N03L FAIRCHILD

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 		N-Channel Logic Level MOSFETs 30V, 30A, 0.023ohm
FQD60N03LTF FAIRCHILD

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 		Power Field-Effect Transistor, 40.3A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, M
FQD60N03LTM ROCHESTER

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 		40.3A, 30V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FQD60N03LTM FAIRCHILD

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 		Power Field-Effect Transistor, 40.3A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, M
FQD630 FAIRCHILD

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 		200V N-Channel MOSFET
FQD630TF FAIRCHILD

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 		Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
FQD630TF_NL FAIRCHILD

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 		Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
FQD6N15 FAIRCHILD

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 		150V N-Channel MOSFET
FQD6N15TF FAIRCHILD

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 		Power Field-Effect Transistor, 5.2A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
FQD6N15TM FAIRCHILD

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 		Power Field-Effect Transistor, 5.2A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Met

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