Datasheet > FQD6N40CTM

FQD6N40CTM

更新时间： 2023-09-03 20:33:23

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
9页	1019K
描述
功率 MOSFET，N 沟道，QFET®，400 V，4.5 A，1.0 Ω，DPAK

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技术参数
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替代型号

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FQD6N40CTM 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	TO-252AA
包装说明：	LEAD FREE, DPAK-3	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.3
其他特性：	FAST SWITCHING	雪崩能效等级（Eas）：	270 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	400 V	最大漏极电流 (ID)：	4.5 A
最大漏源导通电阻：	1 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252AA	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	18 A	认证状态：	COMMERCIAL
表面贴装：	YES	端子面层：	MATTE TIN
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	30	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

FQD6N40CTM 数据手册

ON Semiconductor

Is Now

To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

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FQD6N40CTM 替代型号

型号	品牌	替代类型	描述	数据表
HUF76629D3S	INTERSIL	功能相似	20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
MTD6N10E	MOTOROLA	功能相似	TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM

与FQD6N40CTM相关器件

型号	品牌	获取价格	描述	数据表
FQD6N40CTM-F101	FAIRCHILD	获取价格	Transistor
FQD6N40TF	FAIRCHILD	获取价格	暂无描述
FQD6N40TM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4.2A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Me
FQD6N50C	FAIRCHILD	获取价格	These N-Channel enhancement mode power field effect transistors are produced using Fairchi
FQD6N50C_08	FAIRCHILD	获取价格	500V N-Channel MOSFET
FQD6N50CTF	ROCHESTER	获取价格	4.5A, 500V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, DPAK-3
FQD6N50CTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
FQD6N50CTM	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，500 V，4.5 A，1.2 Ω，DPAK
FQD6N60C	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQD6N60CTF	FAIRCHILD	获取价格	600V N-Channel MOSFET

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