生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FQD7N10TM | FAIRCHILD |
类似代替 ![]() |
Power Field-Effect Transistor, 5.8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Me |
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FQD7N10TF | FAIRCHILD |
功能相似 ![]() |
暂无描述 |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQD7N10L | FAIRCHILD |
获取价格 |
100V LOGIC N-Channel MOSFET |
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FQD7N10L_08 | FAIRCHILD |
获取价格 |
100V LOGIC N-Channel MOSFET |
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FQD7N10LTF | ROCHESTER |
获取价格 |
5.8A, 100V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 |
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FQD7N10LTF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5.8A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Me |
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FQD7N10LTM | FAIRCHILD |
获取价格 |
N-Channel QFET® MOSFET |
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FQD7N10LTM | ONSEMI |
获取价格 |
N 沟道 QFET® MOSFET 100V,5.8A,350mΩ |
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FQD7N10LTM | UMW |
获取价格 |
种类:N-Channel;漏源电压(Vdss):100V;持续漏极电流(Id)(在25°C |
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FQD7N10TF | FAIRCHILD |
获取价格 |
暂无描述 |
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FQD7N10TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5.8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Me |
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FQD7N10TM-WS | FAIRCHILD |
获取价格 |
Transistor |
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