FQD6N60CTF

更新时间： 2024-10-01 22:25:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	679K
描述
600V N-Channel MOSFET

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FQD6N60CTF 数据手册

QFET

FQD6N60C

600V N-Channel MOSFET

Features

Description

•

4 A, 600 V, R

= 2.0 Ω @ V = 10 V

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficiency switched mode power supplies, active power factor

correction, electronic lamp ballasts based on half bridge

topology.

DS(on)

Low gate charge ( typical 16 nC )

Low Crss ( typical 7 pF)

Fast switching

100 % avalanche tested

Improved dv/dt capability

●

◀

▲

●

D-PAK

FQD Series

Absolute Maximum Ratings

Symbol

Parameter

FQD6N60C

Units

Drain-Source Voltage

600

DSS

Drain Current

- Continuous (T = 25°C)

- Continuous (T = 100°C)

2.4

Drain Current

- Pulsed

(Note 1)

Gate-Source Voltage

± 30

300

GSS

Single Pulsed Avalanche Energy

Avalanche Current

(Note 2)

(Note 1)

(Note 3)

4.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

8.0

V/ns

dv/dt

4.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.78

-55 to +150

300

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

°C

Thermal Characteristics

Symbol

Parameter

Typ

Max

1.56

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

FQD6N60C Rev. A

www.fairchildsemi.com

12 3 4 5 6 7 8

中文翻译

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