生命周期: | Active | 零件包装代码: | TO-252 |
包装说明: | DPAK-3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.37 |
雪崩能效等级(Eas): | 220 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 40.3 A | 最大漏源导通电阻: | 0.024 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 161 A | 认证状态: | COMMERCIAL |
表面贴装: | YES | 端子面层: | NOT SPECIFIED |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQD60N03LTF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 40.3A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, M | |
FQD60N03LTM | ROCHESTER |
获取价格 |
40.3A, 30V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | |
FQD60N03LTM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 40.3A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, M | |
FQD630 | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET | |
FQD630TF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal | |
FQD630TF_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal | |
FQD6N15 | FAIRCHILD |
获取价格 |
150V N-Channel MOSFET | |
FQD6N15TF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5.2A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Met | |
FQD6N15TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5.2A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Met | |
FQD6N25 | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET |