生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.72 | 雪崩能效等级(Eas): | 210 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (ID): | 2.8 A |
最大漏源导通电阻: | 2.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 11.2 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQD5P10 | FAIRCHILD |
获取价格 |
100V P-Channel MOSFET | |
FQD5P10_08 | FAIRCHILD |
获取价格 |
100V P-Channel MOSFET | |
FQD5P10TF | ROCHESTER |
获取价格 |
3.6A, 100V, 1.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | |
FQD5P10TM | ROCHESTER |
获取价格 |
3.6A, 100V, 1.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | |
FQD5P10TM | ONSEMI |
获取价格 |
功率 MOSFET,P 沟道,QFET®,-100 V,-3.6 A,1.05 Ω,DPA | |
FQD5P10TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Me | |
FQD5P20 | FAIRCHILD |
获取价格 |
200V P-Channel MOSFET | |
FQD5P20_08 | FAIRCHILD |
获取价格 |
200V P-Channel MOSFET | |
FQD5P20TF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Met | |
FQD5P20TM | FAIRCHILD |
获取价格 |
200V P-Channel MOSFET |