Datasheet > FQD5P20_08

FQD5P20_08

更新时间： 2024-01-17 00:09:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	663K
描述
200V P-Channel MOSFET

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FQD5P20_08 数据手册

October 2008

QFET^®

FQD5P20 / FQU5P20

200V P-Channel MOSFET

Features

General Description

•

-3.7A, -200V, R

= 1.4Ω @V = -10 V

DS(on) GS

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters.

Low gate charge ( typical 10 nC)

Low Crss ( typical 12 pF)

Fast switching

100% avalanche tested

•

RoHS Compliant

●

▶

▲

●

I-PAK

FQU Series

D-PAK

FQD Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQD5P20 / FQU5P20

Units

Drain-Source Voltage

-200

-3.7

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

-2.34

-14.8

± 30

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

330

-3.7

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

4.5

V/ns

dv/dt

-5.5

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.36

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

2.78

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A1, October 2008

12 3 4 5 6 7...9

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