型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQD5P10TM | ROCHESTER |
获取价格 |
3.6A, 100V, 1.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 |
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FQD5P10TM | ONSEMI |
获取价格 |
功率 MOSFET,P 沟道,QFET®,-100 V,-3.6 A,1.05 Ω,DPA |
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FQD5P10TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Me |
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FQD5P20 | FAIRCHILD |
获取价格 |
200V P-Channel MOSFET |
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FQD5P20_08 | FAIRCHILD |
获取价格 |
200V P-Channel MOSFET |
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FQD5P20TF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Met |
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FQD5P20TM | FAIRCHILD |
获取价格 |
200V P-Channel MOSFET |
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FQD5P20TM | ONSEMI |
获取价格 |
功率 MOSFET,P 沟道,QFET®,-200 V,-3.7 A,1.4 Ω,DPAK |
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FQD60N03L | FAIRCHILD |
获取价格 |
N-Channel Logic Level MOSFETs 30V, 30A, 0.023ohm |
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FQD60N03LTF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 40.3A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, M |
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