Datasheet > FQD5N50CTM-WS

FQD5N50CTM-WS

更新时间： 2023-09-03 20:32:38

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
8页	989K
描述
Power MOSFET, N-Channel, QFET®, 500 V, 4 A, 1.4 Ω, DPAK

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技术参数
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FQD5N50CTM-WS 技术参数

是否无铅：	不含铅	生命周期：	Not Recommended
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
风险等级：	5.7	雪崩能效等级（Eas）：	300 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	500 V	最大漏极电流 (ID)：	4 A
最大漏源导通电阻：	1.4 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	16 A
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	30	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

FQD5N50CTM-WS 数据手册

ON Semiconductor

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To learn more about onsemi™, please visit our website at

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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

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与FQD5N50CTM-WS相关器件

型号	品牌	获取价格	描述	数据表
FQD5N50TF	ROCHESTER	获取价格	3.5A, 500V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FQD5N50TM	ROCHESTER	获取价格	3.5A, 500V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FQD5N60C	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQD5N60C_08	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQD5N60CTF	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQD5N60CTM	FAIRCHILD	获取价格	N-Channel QFET MOSFET
FQD5N60CTM	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，600 V，2.8 A，2.5 Ω，DPAK
FQD5N60CTM_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Met
FQD5P10	FAIRCHILD	获取价格	100V P-Channel MOSFET
FQD5P10_08	FAIRCHILD	获取价格	100V P-Channel MOSFET

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