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FMMTA92RTA PDF预览

FMMTA92RTA

更新时间: 2024-11-15 12:59:27
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管高压局域网
页数 文件大小 规格书
2页 74K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon

FMMTA92RTA 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.44
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):25
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

FMMTA92RTA 数据手册

 浏览型号FMMTA92RTA的Datasheet PDF文件第2页 
SOT23 PNP SILICON PLANAR  
HIGH VOLTAGE TRANSISTOR  
FMMTA92  
ISSUE 4 - MARCH 2001  
PARTMARKING DETAILS:  
FMMTA92 - 4E  
E
FMMTA92R - 8E  
C
B
COMPLEMENTARY TYPES:  
FMMTA92 - FMMTA42  
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
FMMTA92  
UNIT  
V
Collector-Base Voltage  
-300  
-300  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
-5  
V
Continuous Collector Current  
Power Dissipation at Tamb = 25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
-200  
mA  
mW  
°C  
Ptot  
330  
Tj:Tstg  
-55 to +150  
= 25°C).  
amb  
FMMTA92  
PARAMETER  
SYMBOL MIN.  
MAX. UNIT  
V
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-300  
-300  
-5  
IC=-100µA, IE=0  
Collector-Emitter Breakdown  
Voltage  
V
V
IC=-1mA, IB=0*  
IE=-100µA, IC=0  
VCB=-200V, IE=0  
Emitter-Base Breakdown  
Voltage  
Collector Cut-Off  
Current  
-0.25  
µA  
µA  
V
CB=-160V, IE=0-  
Emitter Cut-Off Current  
IEBO  
-0.1  
-0.5  
µA  
VEB=-3V, IE=0  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
V
IC=-20mA, IB=-2mA*  
IC=-20mA, IB=-2mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
hFE  
-0.9  
V
Static Forward Current  
Transfer Ratio  
25  
40  
25  
IC=-1mA, VCE=10V*  
IC=-10mA, VCE=10V*  
IC=-30mA,VCE=-10V*  
Transition Frequency  
Output Capacitance  
fT  
50  
MHz  
pF  
IC=-10mA, VCE=-20V  
f=20MHz  
Cobo  
6
VCB=-20V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
TBA  

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