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FMMTL717TC PDF预览

FMMTL717TC

更新时间: 2024-09-13 13:02:11
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美台 - DIODES 晶体小信号双极晶体管光电二极管局域网
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FMMTL717TC 数据手册

 浏览型号FMMTL717TC的Datasheet PDF文件第2页浏览型号FMMTL717TC的Datasheet PDF文件第3页 
SOT23 PNP SILICON PLANAR HIGH GAIN  
MEDIUM POWER TRANSISTOR  
ISSUE 1 – DECEMBER 1997  
FMMTL717  
FEATURES  
Very low equivalent on-resistance; RCE(sat)=160mat 1.25A  
E
COMPLEMENTARY TYPE – FMMTL617  
C
PARTMARKING DETAIL –  
L77  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
-12  
-12  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
-5  
V
Continuous Collector Current  
Peak Pulse Current  
-1.25  
-4  
A
ICM  
A
Base Current  
IB  
-200  
mA  
mW  
°C  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
Ptot  
-500  
Tj:Tstg  
-55 to +150  

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