Datasheet > FMMTH10TC

FMMTH10TC

更新时间： 2024-02-12 15:31:54

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
2页	115K
描述
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

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技术参数
数据手册

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FMMTH10TC 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.77
Is Samacsys：	N	Base Number Matches：	1

FMMTH10TC 数据手册

SOT23 NPN SILICON PLANAR

RF TRANSISTOR

ISSUE 2 NOVEMBER 1995

FMMTH10

FEATURES

High f_T=650MHz

Maximum capacitance 0.7pF

Low noise < 5dB at 500MHz

PARTMARKING DETAIL

3EZ

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CES

VALUE

UNIT

Collector-Emitter Voltage

V_CEO

V_EBO

I_C

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

°C

I_CM

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

P_tot

330

T_j:T_stg

= 25°C)

-55 to +150

amb

PARAMETER

Collector-Base Breakdown V_(BR)CBO

Voltage

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

I_C=100µA, I_E=0

Collector-Emitter

Breakdown Voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=1mA, I_B=0

I_E=10µA, I_C=0

V_CB=25V, I_E=0

Emitter-Base Breakdown

Voltage

Collector Cut-Off

Current

100

Emitter Cut-Off Current

I_EBO

100

0.5

V_EB=2V,I_C=0

Collector-Emitter Saturation V_CE(sat)

Voltage

I_C=4mA, I_B=0.4mA

Common Base Feedback

Capacitance

C_rb

Typ.

0.45

0.65

0.95

V_CB=10V, I_E=0

f=1MHz

Base-Emitter Turn-On

Voltage

V_BE(on)

h_FE

I_C=4mA, V_CE=10V

Static Forward Current

Transfer Ratio

I_C=4mA, V_CE=10V*

Transition Frequency

f_T

650

MHz

I_C=4mA, V_CE=10V, f=100MHz

V_CB=10V, I_E=0, f=1MHz

Collector Base Capacitance C_cb

Collector Base Time Constant r_bC_c

0.7

I_C=4mA, V_CB=10V, f=31.8MHz

Noise Figure

N_f

Typ.

I_C=2mA, V_CE=5V

f=500MHz,

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

3 - 181

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